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晶圓級產品表面的聚苯噁唑裂痕之研究 = Study of polyben...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

晶圓級產品表面的聚苯噁唑裂痕之研究 = Study of polybenzoxazole surface cracking in wafer level chip size packaging

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Study of polybenzoxazole surface cracking in wafer level chip size packaging
作者:	林嘉玲,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2009[民98]
面頁冊數:	10, 60面圖，表 : 30公分;
標題:	晶圓級產品
標題:	WLCSP
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/42799870512120798835
摘要註:	半導體構裝製程中會在晶圓級產品的表面選擇塗膜一層薄膜，是為了抵抗溼氣以及緩衝熱應力，其材料為光阻的一種，製程流程和微影製程相同。在烘烤步驟下，若溫度太低時，將必須增加驅除光阻層的時間且薄膜也較易剝離；溫度太高時，會造成顯影後有殘留的現象也易使光阻膜產生皺摺或裂痕。本文探討表面塗膜材料聚苯噁唑（Polybenzoxazole；PBO）於微影製程中與烘烤烤箱和時間溫度的關係，實驗使用的烤箱為真空裝置式的爐火（vacuum furnace），搭配3組不同溫度與時間，透過實驗對晶圓級產品（WLCSP）進行晶片表面裂痕之研究，經厚度量測、表面均勻性量測以及表面缺陷之觀察，完成實驗烘烤的參數。 In the semiconductor manufacturing process of wafer-level chip scale package (WLCSP), a thin coating of film-like material; usually a type of photo-resist material which is similarly used in lithography process, is generally applied on the surface of the package to resist moisture attacks and reduce thermal stress. In the stage of baking this resistive film, while the process temperature is too low, or lower then a critical point it takes longer time to remove the photo resist, and the resistive film is easily to be peel-off. If the process temperature is under counter, set too high then residual contain mention will occur after the process of photo-resist development, and cause wrinkles and cracks on the photo resist film. This object of this thesis is to investigate the dependence of backing condition on Polybenzoxazole (PBO) surface cracks of WLCSP products in the photo-lithography process. The oven types selected in this study a vacuum oven is selected, and three sets of backing condition are chased in this experiment. And through the measurement and observation of the variation in surface crack defects, film thickness and film uniformity of different processing condition, able to optimize the parameter of baking process for WLCSP products.

晶圓級產品表面的聚苯噁唑裂痕之研究 = Study of polybenzoxazole surface cracking in wafer level chip size packaging
林, 嘉玲

晶圓級產品表面的聚苯噁唑裂痕之研究 = Study of polybenzoxazole surface cracking in wafer level chip size packaging / 林嘉玲撰 - [高雄市] : 撰者, 2009[民98]. - 10, 60面 ; 圖，表 ; 30公分.
參考書目：面59-60.
晶圓級產品WLCSP

晶圓級產品表面的聚苯噁唑裂痕之研究 = Study of polybenzoxazole surface cracking in wafer level chip size packaging
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330 $a 半導體構裝製程中會在晶圓級產品的表面選擇塗膜一層薄膜，是為了抵抗溼氣以及緩衝熱應力，其材料為光阻的一種，製程流程和微影製程相同。在烘烤步驟下，若溫度太低時，將必須增加驅除光阻層的時間且薄膜也較易剝離；溫度太高時，會造成顯影後有殘留的現象也易使光阻膜產生皺摺或裂痕。本文探討表面塗膜材料聚苯噁唑（Polybenzoxazole；PBO）於微影製程中與烘烤烤箱和時間溫度的關係，實驗使用的烤箱為真空裝置式的爐火（vacuum furnace），搭配3組不同溫度與時間，透過實驗對晶圓級產品（WLCSP）進行晶片表面裂痕之研究，經厚度量測、表面均勻性量測以及表面缺陷之觀察，完成實驗烘烤的參數。 In the semiconductor manufacturing process of wafer-level chip scale package (WLCSP), a thin coating of film-like material; usually a type of photo-resist material which is similarly used in lithography process, is generally applied on the surface of the package to resist moisture attacks and reduce thermal stress. In the stage of baking this resistive film, while the process temperature is too low, or lower then a critical point it takes longer time to remove the photo resist, and the resistive film is easily to be peel-off. If the process temperature is under counter, set too high then residual contain mention will occur after the process of photo-resist development, and cause wrinkles and cracks on the photo resist film. This object of this thesis is to investigate the dependence of backing condition on Polybenzoxazole (PBO) surface cracks of WLCSP products in the photo-lithography process. The oven types selected in this study a vacuum oven is selected, and three sets of backing condition are chased in this experiment. And through the measurement and observation of the variation in surface crack defects, film thickness and film uniformity of different processing condition, able to optimize the parameter of baking process for WLCSP products.
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