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紫外光活化之氧化鋅薄膜氣體偵測器研究 = The Study of Zn...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

紫外光活化之氧化鋅薄膜氣體偵測器研究 = The Study of ZnO thin film gas sensors activation by UV light

Record Type:	Language materials, printed : monographic
Paralel Title:	The Study of ZnO thin film gas sensors activation by UV light
Author:	陳冠廷,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2009[民98]
Description:	71面圖，表 : 30公分;
Subject:	電阻
Subject:	ultra-violet(UV)
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/59933398002167640785
Summary:	本論文以熱蒸鍍技術，製作鋅薄膜於藍寶石基板上，搭配後續熱處理以得到奈米氧化鋅薄膜。研究此氧化鋅薄膜在氮氣與氧氣環境下，紫外光照射與否以及不同光功率照射下之電阻改變，探討其反應及恢復時間的差異。經由表面結構等分析，探究其物理機制。並探討運用光脈衝方式及對應之訊號處理，獲致縮短反應及恢復時間的應用方式。 In this dissertation, the nano structured Zinc Oxide (ZnO) was achieved by the thermally evaporated Zinc (Zn) on sapphire substrate followed by suitable thermal treatment. The resistance for the film was studied under different oxygen and nitrogen gas conditions and ultra violet light illumination. The response and recovery time for the film with different conditions was studied. The mechanism was discussed with the surface morphology study and the corresponded physical models. Under the pulse light modulation and the followed signal process, applications with short response and recovery time can be achieved.

紫外光活化之氧化鋅薄膜氣體偵測器研究 = The Study of ZnO thin film gas sensors activation by UV light
陳, 冠廷

紫外光活化之氧化鋅薄膜氣體偵測器研究 = The Study of ZnO thin film gas sensors activation by UV light / 陳冠廷撰 - [高雄市] : 撰者, 2009[民98]. - 71面 ; 圖，表 ; 30公分.
參考書目：面24-28.
電阻ultra-violet(UV)

紫外光活化之氧化鋅薄膜氣體偵測器研究 = The Study of ZnO thin film gas sensors activation by UV light
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328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
330 $a 本論文以熱蒸鍍技術，製作鋅薄膜於藍寶石基板上，搭配後續熱處理以得到奈米氧化鋅薄膜。研究此氧化鋅薄膜在氮氣與氧氣環境下，紫外光照射與否以及不同光功率照射下之電阻改變，探討其反應及恢復時間的差異。經由表面結構等分析，探究其物理機制。並探討運用光脈衝方式及對應之訊號處理，獲致縮短反應及恢復時間的應用方式。 In this dissertation, the nano structured Zinc Oxide (ZnO) was achieved by the thermally evaporated Zinc (Zn) on sapphire substrate followed by suitable thermal treatment. The resistance for the film was studied under different oxygen and nitrogen gas conditions and ultra violet light illumination. The response and recovery time for the film with different conditions was studied. The mechanism was discussed with the surface morphology study and the corresponded physical models. Under the pulse light modulation and the followed signal process, applications with short response and recovery time can be achieved.
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