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鎳鈀金球下金屬層對電遷移影響之研究 = Electromigration...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

鎳鈀金球下金屬層對電遷移影響之研究 = Electromigration Study of Ni-Pd-Au UBM effect

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Electromigration Study of Ni-Pd-Au UBM effect
作者:	王耀輝,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2009[民98]
面頁冊數:	8, 50面圖，表 : 30公分;
標題:	球下金屬層
標題:	UBM
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/52211392448737663403
摘要註:	本論文目的主要是在利用球下金屬層(UBM)不同的厚度，串接電路後比較其錫球與UBM部分的電子遷移現象，且針對不同厚度與相同時間之內探討其遷移的特性，配合不同溫度下,Ni/Pd/Au遷移狀況,用以推算不同材料的可靠度。在晶圓級尺寸封裝的技術日新月異之下,相同的電流隨著尺寸的縮小相對於電阻的提升,因此加速電子遷移的現象產生,而此實驗就影響電子遷移的兩項因素,溫度與電流密度,針對不同的厚度的UBM尋求對於Ni/Pd/Au材料抗遷移的情況去研究;溫度控制方面，由於我們是利用採用無鉛製程,錫球材料採95.5%Sn + 4%Ag + 0.5%Cu,並將實驗溫度訂為150℃與125℃,電壓採用0.9V 1.0V,4種控制因素與3種不同UBM厚度的樣品作電遷移實驗並將量測結果進行比較分析。從與特性量測結果的觀察，我們可以了解Ni/Pd/Au對WLCSP上之變化，並藉由製程技術的提供，使得我們更了解UBM層厚度的設計對電遷移的影響，並期望朝著如何以提高產品可靠性來努力。 In this thesis ,our purpose is utilizing the different thickness of UBM ,connect the circuit and compare the electromigration phenomenon for solder ball with UBM and aim different thickness with the same time to probe into their characteristic ,and calculate the reliability of different materials with different temperature, and Ni/Pd/Au electromigration state.In WLCSP package technology is advancement ,identical current will follow size reduce and resistance upgrading ,so electromigration phenomenon to accelerate ,this experimentation focus two effect factor, temperature and density of current, the aim to study that resist electromigration situation for Ni/Pd/Au material to UBM of different thickness; About temperature control, because we to use Lead-free process, solder ball material adopt 95.5%Sn + 4%Ag +0.5%Cu, and Setup temperature is 150 ℃and 125 ℃, the voltage adopt 0.9V and 1.0V, four kinds of control factor and three kinds of samples of different UBM thickness to experiment and record result to analyze. From examining observation of the result with the characteristic amount, we can understand Ni/Pd/Au to the change on WLCSP, utilize offering of process, make us understand UBM layers of design of thickness to influence more, towards what efforts by improving products dependability are expected.

鎳鈀金球下金屬層對電遷移影響之研究 = Electromigration Study of Ni-Pd-Au UBM effect
王, 耀輝

鎳鈀金球下金屬層對電遷移影響之研究 = Electromigration Study of Ni-Pd-Au UBM effect / 王耀輝撰 - [高雄市] : 撰者, 2009[民98]. - 8, 50面 ; 圖，表 ; 30公分.
參考書目：面49-50.
球下金屬層UBM

鎳鈀金球下金屬層對電遷移影響之研究 = Electromigration Study of Ni-Pd-Au UBM effect
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328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
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