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Characterization methods for submicr...

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Haddara, Hisham.

Characterization methods for submicron MOSFETs /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Characterization methods for submicron MOSFETs /edited by Hisham Haddara.
其他作者:	Haddara, Hisham.
出版者:	Boston :Kluwer Academic Publishers,c1995.
面頁冊數:	vii, 232 p. :ill. ;24 cm.
叢書名:	Analog circuits and signal processing
標題:	Metal oxide semiconductor field-effect transistorsMathematical models.
ISBN:	0792396952 (acid-free paper) :

Characterization methods for submicron MOSFETs /
Characterization methods for submicron MOSFETs /edited by Hisham Haddara. - Boston :Kluwer Academic Publishers,c1995. - vii, 232 p. :ill. ;24 cm. - Analog circuits and signal processingSECS 352..

Includes bibliographical references and index.

ISBN: 0792396952 (acid-free paper) :NT$3,400

LCCN: 95050306 Subjects--Topical Terms:

184285
Metal oxide semiconductor field-effect transistors
--Mathematical models.

LC Class. No.: TK7871.95 / C469 1995

Dewey Class. No.: 621.3815/284

Characterization methods for submicron MOSFETs /
LDR:00689nam 2200181 a 450 001 144043
005 19970108122801.0
008 090528s1995 maua 001 0 eng
010 $a 95050306
020 $a 0792396952 (acid-free paper) : $c NT$3,400
035 $a 00004516
040 $a DLC $c DLC $d DLC
050 0 0 $a TK7871.95 $b C469 1995
082 0 0 $2 20 $a 621.3815/284
245 0 0 $a Characterization methods for submicron MOSFETs / $c edited by Hisham Haddara.
260 $a Boston : $c c1995. $b Kluwer Academic Publishers,
300 $a vii, 232 p. : $b ill. ; $c 24 cm.
440 0 $a Analog circuits and signal processing $a The Kluwer international series in engineering and computer science ; $v SECS 352.
504 $a Includes bibliographical references and index.
650 $a Metal oxide semiconductor field-effect transistors $x Mathematical models. $3 184285
650 $a Electronic circuit design. $3 182267
700 $a Haddara, Hisham. $3 184284

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