國立高雄大學圖資館 |

登入

回首頁

Enhanced, quantitative analysis of resist image contrast upon line edge roughness (LER)

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Enhanced, quantitative analysis of resist image contrast upon line edge roughness (LER)
作者:	Williamson, Michael Victor.
面頁冊數:	154 p.
附註:	Chair: Andrew R. Neureuther.
附註:	Source: Dissertation Abstracts International, Volume: 65-02, Section: B, page: 0947.
Contained By:	Dissertation Abstracts International65-02B.
標題:	Engineering, Electronics and Electrical.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3121754
ISBN:	0496691058

Enhanced, quantitative analysis of resist image contrast upon line edge roughness (LER)
Williamson, Michael Victor.

Enhanced, quantitative analysis of resist image contrast upon line edge roughness (LER) [electronic resource] - 154 p.

Chair: Andrew R. Neureuther.

Thesis (Ph.D.)--University of California, Berkeley, 2003.

Finally, an image deblurring algorithm often used in astronomy was applied to scanning electron microscope (SEM) images using 3 different SEM machines in order to improve image quality in the high frequency domain and obtain better LER measurements on these SEMs. The algorithm was rigorously tested. It was able to deblur SEM images in most any cases and it altered LER measurements roughly 11--15%, however statistical variation in LER among the samples was so large than any potential improvements in LER measurement accuracy were undetectable. Nonetheless, some unexpected benefits of the deblurring algorithm are that it can help troubleshoot SEM machines and create a larger operating specification window for the SEM tool.

ISBN: 0496691058Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Enhanced, quantitative analysis of resist image contrast upon line edge roughness (LER)
LDR:03501nmm _2200313 _450 001 162455
005 20051017073448.5
008 230606s2003 eng d
020 $a 0496691058
035 $a 00148956
035 $a 162455
040 $a UnM $c UnM
100 0 $a Williamson, Michael Victor. $3 227594
245 1 0 $a Enhanced, quantitative analysis of resist image contrast upon line edge roughness (LER) $h [electronic resource]
300 $a 154 p.
500 $a Chair: Andrew R. Neureuther.
500 $a Source: Dissertation Abstracts International, Volume: 65-02, Section: B, page: 0947.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2003.
520 # $a Finally, an image deblurring algorithm often used in astronomy was applied to scanning electron microscope (SEM) images using 3 different SEM machines in order to improve image quality in the high frequency domain and obtain better LER measurements on these SEMs. The algorithm was rigorously tested. It was able to deblur SEM images in most any cases and it altered LER measurements roughly 11--15%, however statistical variation in LER among the samples was so large than any potential improvements in LER measurement accuracy were undetectable. Nonetheless, some unexpected benefits of the deblurring algorithm are that it can help troubleshoot SEM machines and create a larger operating specification window for the SEM tool.
520 # $a LER is first examined with multiple photoresists at 9 different contrast levels each. Some unexpected results of this experiment lead to a new experiment and to the creation of a new form of defining contrast based solely upon the background exposure, the background contrast. This contrast is orthogonalized as best as possible to the standard (max - min) contrast and the image slope at clear dose, and approximately 200 LER measurements are collected at 8 different contrast levels. Rigorous statistical analysis conclusively proves that LER tracked background contrast best, with LER &prop; background contrast -1 approximately. The statistical F-ratio fitting LER measurements to a predicted LER model using background contrast was 163.3, whereas the F-ratio fitting data to a predicted LER model using the next best form of contrast was 56.1.
520 # $a This thesis examines the dependence of photoresist line edge roughness (LER) on lithographic aerial image contrast. A wide range of image contrasts are created using a double exposure programmed image technique where the total exposure dose and the ratio of fore-ground to background exposure dose are varied. As contrast is altered, one-dimensional LER and two-dimensional side edge roughness (SER) are measured on UVII-HS, UV210, SEPR-463, and Apex-E.
520 # $a Two-dimensional SER studies of around 20 samples focus upon the shape of photoresist roughness. Roughness peak to peak spacing has a bimodal distribution, with one mode distributed around roughly 30 nm and the other mode centered around 100 nm. Roughness curvature is on the order of 1°, much wider than the atomic force microscope (AFM) probe tip used to accurately measure roughness.
590 $a School code: 0028.
650 # 0 $a Engineering, Electronics and Electrical. $3 226981
650 # 0 $a Engineering, Materials Science. $3 226940
690 $a 0544
690 $a 0794
710 0 # $a University of California, Berkeley. $3 212474
773 0 # $g 65-02B. $t Dissertation Abstracts International
790 $a 0028
790 1 0 $a Neureuther, Andrew R., $e advisor
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://libsw.nuk.edu.tw/login?url=http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3121754 $z http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3121754