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Tunnel based spin injection devices for semiconductor spintronics

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Tunnel based spin injection devices for semiconductor spintronics
作者:	Jiang, Xin.
面頁冊數:	117 p.
附註:	Advisers: James S. Harris; Stuart S. P. Parkin.
附註:	Source: Dissertation Abstracts International, Volume: 65-04, Section: B, page: 1919.
Contained By:	Dissertation Abstracts International65-04B.
標題:	Physics, Condensed Matter.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3128653
ISBN:	0496759159

Tunnel based spin injection devices for semiconductor spintronics
Jiang, Xin.

Tunnel based spin injection devices for semiconductor spintronics [electronic resource] - 117 p.

Advisers: James S. Harris; Stuart S. P. Parkin.

Thesis (Ph.D.)--Stanford University, 2004.

Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of &sim;10% is found for injection electron energy of &sim;2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of &sim;50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides insight into spin relaxation mechanisms within the semiconductor heterostructure.

ISBN: 0496759159Subjects--Topical Terms:

226939
Physics, Condensed Matter.

Tunnel based spin injection devices for semiconductor spintronics
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502 $a Thesis (Ph.D.)--Stanford University, 2004.
520 # $a Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of &sim;10% is found for injection electron energy of &sim;2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of &sim;50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides insight into spin relaxation mechanisms within the semiconductor heterostructure.
520 # $a The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5).
520 # $a This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT).
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