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Development of selective absorption ...

Chediak, Juan Alexander.

Development of selective absorption filters for integrated fluorescence microsystems.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Development of selective absorption filters for integrated fluorescence microsystems.
作者:	Chediak, Juan Alexander.
面頁冊數:	118 p.
附註:	Chairs: Eicke R. Weber; Oscar D. Dubon, Jr.
附註:	Source: Dissertation Abstracts International, Volume: 65-09, Section: B, page: 4770.
Contained By:	Dissertation Abstracts International65-09B.
標題:	Engineering, Materials Science.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3146812
ISBN:	0496057111

Development of selective absorption filters for integrated fluorescence microsystems.
Chediak, Juan Alexander.

Development of selective absorption filters for integrated fluorescence microsystems. - 118 p.

Chairs: Eicke R. Weber; Oscar D. Dubon, Jr.

Thesis (Ph.D.)--University of California, Berkeley, 2004.

Cd(S,Se) films were deposited by pulsed-laser deposition and the relationship between deposition conditions, microstructure, properties and performance was investigated. It was learned that a substrate temperature of 350°C resulted in films with the highest degree of crystalline perfection, and the steepest absorption edges. These 1--2 mum films were found to perform comparably with commercial DBRs and those of other University research groups, and a thin ITO layer was found to promote adhesion.

ISBN: 0496057111Subjects--Topical Terms:

226940
Engineering, Materials Science.

Development of selective absorption filters for integrated fluorescence microsystems.
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245 1 0 $a Development of selective absorption filters for integrated fluorescence microsystems.
300 $a 118 p.
500 $a Chairs: Eicke R. Weber; Oscar D. Dubon, Jr.
500 $a Source: Dissertation Abstracts International, Volume: 65-09, Section: B, page: 4770.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2004.
520 # $a Cd(S,Se) films were deposited by pulsed-laser deposition and the relationship between deposition conditions, microstructure, properties and performance was investigated. It was learned that a substrate temperature of 350°C resulted in films with the highest degree of crystalline perfection, and the steepest absorption edges. These 1--2 mum films were found to perform comparably with commercial DBRs and those of other University research groups, and a thin ITO layer was found to promote adhesion.
520 # $a If (In,Ga)N films could be used as filters, then the light source (an (In,Ga)N LED) and filter could be fabricated on the same substrate. Therefore, the absorption properties of thin MOCVD-deposited (In,Ga)N films were characterized as a function of InN mole fraction. An empirical model was employed to fit the absorption spectra of (In,Ga)N epilayers ranging from 2--16% InN mole fraction. This model was verified to be quantitatively accurate for a 300 nm In0.16Ga0.84 N epilayer. Based on the excellent fit of theoretical data derived from the model and experimental data obtained from the 2--16% InN mole fraction films, extrapolation was performed to higher InN mole fractions. It was determined that a 5 mum In0.22 Ga0.78N film would transmit 50% of green light and 3.3 x 10-4 of blue light.
520 # $a Progress has been made toward the development of robust, thin-film, absorption filters for use in integrated fluorescence detection microsystems. For the majority of this work, a system with blue excitation light and green emission light is envisioned. Given the engineering requirements, the maximum allowable transmission of excitation light was established to be 1 x 10 -6.
520 # $a Prototype microanalytical fluorescence detection systems, integrating Cd(S,Se) filters, were invented and fabricated. A detection limit on the order of 100 nM was achieved with a 1.2 mum CdS film. In a further improvement, a first-of-a-kind multi-color fluorescence detection system was demonstrated having two filters (CdS and CdS0.9Se0.1), two LEDs (with differing (In,Ga)N compositions), and two matching dyes, each of which showed detection sensitivities as low as 100 nM.
520 # $a Since (In,Ga)N was determined to be non-optimal as a filter, the Cd(S,Se) system was evaluated. Cd(S,Se) films are also direct band gap semiconductors and have steep absorption edges because their band structure's curvature is low, such that an incremental increase in photon energy leads to a large increase in the number of states available to interact with photons. Further, Cd(S,Se) possesses complete miscibility, hence the absorption edge can be tailored throughout much of the visible regime (513 to 714 nm). Thirdly, the absorption edge of CdS is 513 nm, conveniently located between blue and green light.
590 $a School code: 0028.
650 # 0 $a Engineering, Materials Science. $3 226940
690 $a 0794
710 0 # $a University of California, Berkeley. $3 212474
773 0 # $g 65-09B. $t Dissertation Abstracts International
790 $a 0028
790 1 0 $a Dubon, Oscar D., Jr., $e advisor
790 1 0 $a Weber, Eicke R., $e advisor
791 $a Ph.D.
792 $a 2004
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