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Computational studies of plasma-surf...

Humbird, David W.

Computational studies of plasma-surface interactions.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Computational studies of plasma-surface interactions.
作者:	Humbird, David W.
面頁冊數:	242 p.
附註:	Chair: David B. Graves.
附註:	Source: Dissertation Abstracts International, Volume: 65-09, Section: B, page: 4707.
Contained By:	Dissertation Abstracts International65-09B.
標題:	Engineering, Chemical.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3146887
ISBN:	049605855X

Computational studies of plasma-surface interactions.
Humbird, David W.

Computational studies of plasma-surface interactions. - 242 p.

Chair: David B. Graves.

Thesis (Ph.D.)--University of California, Berkeley, 2004.

Energetic argon ions impacting silicon surfaces are shown to establish an amorphous region near the surface and maintain its thickness under continued ion bombardment, suggesting a dynamic balance between ion-induced damage and re-crystallization of the surface. Silicon atoms in the amorphous region are readily mixed by argon ions, while limited mixing in the crystalline layer is observed.

ISBN: 049605855XSubjects--Topical Terms:

226989
Engineering, Chemical.

Computational studies of plasma-surface interactions.
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245 1 0 $a Computational studies of plasma-surface interactions.
300 $a 242 p.
500 $a Chair: David B. Graves.
500 $a Source: Dissertation Abstracts International, Volume: 65-09, Section: B, page: 4707.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2004.
520 # $a Energetic argon ions impacting silicon surfaces are shown to establish an amorphous region near the surface and maintain its thickness under continued ion bombardment, suggesting a dynamic balance between ion-induced damage and re-crystallization of the surface. Silicon atoms in the amorphous region are readily mixed by argon ions, while limited mixing in the crystalline layer is observed.
520 # $a Improved semi-empirical interatomic potentials for silicon-fluorine and silicon-chlorine are presented that predict spontaneous etching of Si with F and Cl atoms. The etch probability, steady-state halogen coverage, and etch product distributions are in agreement with published data. The atomistic mechanisms are found to be in agreement with those proposed in the literature. The addition of simultaneous energetic argon ion bombardment is next examined. Si etch yields are again in good agreement with experiments. The atomic-scale mechanisms of ion-enhanced etching and the apparent major roles of ions in enhancing the etch rate are discussed. The thermal etchant/energetic inert case is compared to the case of energetic etchant and the newly developed potential is compared to the older, less accurate ones.
520 # $a Molecular dynamics (MD) simulations are conducted to gain insight on the atomic-scale details of fundamental silicon etching processes such as ion-neutral synergy and etch inhibition with fluorocarbon species.
520 # $a The mechanisms by which fluorocarbon (FC) plasmas etch, and inhibit etch of, silicon surfaces are examined. Thermal CF2 deposited on Si is 'defluorinated' by energetic Ar+; F is separated from C and both mixed into the underlying Si, initiating etching. F and C uptake is enhanced by energetic Ar+ impact and the Si etch rate is higher than physical sputtering. At higher ion fluence, the separation of C-F into Si-C and Si-F is more pronounced and a silicon carbide top layer forms. With thermal CF2 only and 200 eV Ar+, the Si-C layer stops etching of the underlying Si. Adding a fluence of F atoms increases the permeability of this layer, resulting in steady etching of the underlying Si. FC polymer and bare Si etch much faster than the Si-C layer. The mechanism of steady state Si etching through this layer involves a leading front of SiFx that fluorinates the Si substrate, followed by another front of Si-C. Si is generally removed by ion impact at the surface of the Si-C layer. (Abstract shortened by UMI.)
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710 0 # $a University of California, Berkeley. $3 212474
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790 1 0 $a Graves, David B., $e advisor
791 $a Ph.D.
792 $a 2004
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