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Nanoscale transistors :device physic...

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Guo, Jing, (1977-)

Nanoscale transistors :device physics, modeling and simulation /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Nanoscale transistors :Mark S. Lundstrom, Jing Guo.
其他題名:	device physics, modeling and simulation /
作者:	Lundstrom, Mark.
其他作者:	Guo, Jing,
出版者:	New York :Springer,c2006.
面頁冊數:	vi, 217 p. :ill. ;24 cm.
標題:	Metal oxide semiconductor field-effect transistorsMathematical models.
ISBN:	0387280022 (hbk.) :

Nanoscale transistors :device physics, modeling and simulation /
Lundstrom, Mark.

Nanoscale transistors :device physics, modeling and simulation /Mark S. Lundstrom, Jing Guo. - New York :Springer,c2006. - vi, 217 p. :ill. ;24 cm.

Includes bibliographical references and index.

ISBN: 0387280022 (hbk.) :NT2638

Standard No.: 9780387280028

LCCN: 2005933746

Nat. Bib. No.: GBA581849bnbSubjects--Topical Terms:

184285
Metal oxide semiconductor field-effect transistors
--Mathematical models.

LC Class. No.: TK7871.95 / .N36 2006

Dewey Class. No.: 621.381528

Nanoscale transistors :device physics, modeling and simulation /
LDR:00679cam _2200217 a_450 001 166145
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008 090528s2006 nyum b a001 0 eng c
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015 $2 bnb $a GBA581849
020 $a 0387280022 (hbk.) : $c NT2638
024 3 $a 9780387280028
035 $a 00161957
040 $a UKM $c STF $d BAKER $d BGU $d IXA $d OHX $d UKM
042 $a pcc
050 4 $a TK7871.95 $b .N36 2006
082 0 4 $2 22 $a 621.381528
100 $a Lundstrom, Mark. $3 234941
245 1 0 $a Nanoscale transistors : $b device physics, modeling and simulation / $c Mark S. Lundstrom, Jing Guo.
260 $a New York : $c c2006. $b Springer,
300 $a vi, 217 p. : $b ill. ; $c 24 cm.
504 $a Includes bibliographical references and index.
650 $a Metal oxide semiconductor field-effect transistors $x Mathematical models. $3 184285
650 $a Nanostructured materials $x Mathematical models. $3 234942
650 $a Nanotechnology. $3 193873
700 $a Guo, Jing, $d 1977- $3 234940

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