國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Experimental studies of radical-surf...

Kimura, Yoshie.

Experimental studies of radical-surface interactions.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Experimental studies of radical-surface interactions.
作者:	Kimura, Yoshie.
面頁冊數:	156 p.
附註:	Chair: David B. Graves.
附註:	Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4359.
Contained By:	Dissertation Abstracts International66-08B.
標題:	Engineering, Chemical.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3187074
ISBN:	9780542294389

Experimental studies of radical-surface interactions.
Kimura, Yoshie.

Experimental studies of radical-surface interactions. - 156 p.

Chair: David B. Graves.

Thesis (Ph.D.)--University of California, Berkeley, 2005.

Si and SiO2 surfaces were exposed first to un-dissociated c-C4F8 with and without Ar+ at the surface, then to a mixture of characterized CxFy radical and stable species with and without Ar+. The mixture of reactive neutral species impacting the surfaces included CF, CF2, CF 3 and various heavy CxFy species. The neutral fluorocarbon flux to Ar+ flux and the energy of the Ar + beam impacting the surfaces were varied. Large CxF y species were shown to play an unexpectedly large role in the plasma-surface chemistry.

ISBN: 9780542294389Subjects--Topical Terms:

226989
Engineering, Chemical.

Experimental studies of radical-surface interactions.
LDR:03223nmm _2200289 _450 001 170808
005 20061228142251.5
008 090528s2005 eng d
020 $a 9780542294389
035 $a 00242838
040 $a UnM $c UnM
100 0 $a Kimura, Yoshie. $3 244839
245 1 0 $a Experimental studies of radical-surface interactions.
300 $a 156 p.
500 $a Chair: David B. Graves.
500 $a Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4359.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2005.
520 # $a Si and SiO2 surfaces were exposed first to un-dissociated c-C4F8 with and without Ar+ at the surface, then to a mixture of characterized CxFy radical and stable species with and without Ar+. The mixture of reactive neutral species impacting the surfaces included CF, CF2, CF 3 and various heavy CxFy species. The neutral fluorocarbon flux to Ar+ flux and the energy of the Ar + beam impacting the surfaces were varied. Large CxF y species were shown to play an unexpectedly large role in the plasma-surface chemistry.
520 # $a The effects of F atoms and Ar+ on porous hydrogen silsesquioxane (HSQ were studied and compared to the effects on blanket SiO2 films. The parameters studied included substrate temperature, Ar+ incident angle, Ar+ energy, and transitional effect of pulsing Ar+ flux. The observations indicate significant F atom uptake in HSQ pores after F atom exposure and no significant F atom uptake for blanket SiO2. These observations implied that pores play a significant role in surface chemistries.
520 # $a Two types CxFy films were exposed to NH3 and O atoms. It was observed that O atoms spontaneously etched both C xFy films with less than 1% reaction probability at room temperature. For NH3 exposure, our observations indicated a large deposition rate of NH3 on the surface and a large flux of reaction products leaving the surface. This implied that NH3 is highly reactive on CxFy films.
520 # $a We have developed a new experimental vacuum beam system to study radical-surface interactions. The beam system is novel because of the ability to make three in situ measurements. First, we can quantitatively characterize the flux of radicals to the surface using a threshold ionization mass spectrometer. Second, we can detect etch/deposition rates, with a quartz crystal microbalance, and surface bond modifications, with attenuated total internal reflectance Fourier transform infrared spectrometer. The measurements are made in situ during the surface exposure to radicals and ions. Third, we can characterize the flux of species coming off the surface using the threshold ionization mass spectrometer. Our experimental studies with the system indicate that the new system is capable of obtaining fundamental insights into radical-surface interactions.
590 $a School code: 0028.
650 # 0 $a Engineering, Chemical. $3 226989
690 $a 0542
710 0 # $a University of California, Berkeley. $3 212474
773 0 # $g 66-08B. $t Dissertation Abstracts International
790 $a 0028
790 1 0 $a Graves, David B., $e advisor
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://libsw.nuk.edu.tw:81/login?url=http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3187074 $z http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3187074