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Coherent near infrared photodetectio...
~
Fu, Jun-Xian.
Coherent near infrared photodetection with indium gallium arsenide based optoelectronic devices.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Coherent near infrared photodetection with indium gallium arsenide based optoelectronic devices.
作者:
Fu, Jun-Xian.
面頁冊數:
114 p.
附註:
Adviser: James S. Harris, Jr.
附註:
Source: Dissertation Abstracts International, Volume: 66-08, Section: B, page: 4392.
Contained By:
Dissertation Abstracts International66-08B.
標題:
Engineering, Electronics and Electrical.
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3187287
ISBN:
9780542295058
Coherent near infrared photodetection with indium gallium arsenide based optoelectronic devices.
Fu, Jun-Xian.
Coherent near infrared photodetection with indium gallium arsenide based optoelectronic devices.
- 114 p.
Adviser: James S. Harris, Jr.
Thesis (Ph.D.)--Stanford University, 2005.
A compact standing-wave Fourier-transform interferometer system capable of coherent detection in the near-infrared region is demonstrated. A new technique of identifying coherent light sources using harmonic Fourier spectra analysis is developed. The system only includes a PZT-controlled gold-coated scan mirror and a partial-transparent (3.8% single-path loss) InP/InAlAs/InGaAs HPT. The close-loop scan range of PZT-controlled mirror is 32mum. With such mirror scan length, at the harmonic 5th order spectrum components, the resolution of the demonstrated interferometer is 37.5cm-1 with the free spectral range ∼340nm and central spectral position at 1500nm. The system resolution could reach 1 cm-1 with improved system design and elements selection.
ISBN: 9780542295058Subjects--Topical Terms:
226981
Engineering, Electronics and Electrical.
Coherent near infrared photodetection with indium gallium arsenide based optoelectronic devices.
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A compact standing-wave Fourier-transform interferometer system capable of coherent detection in the near-infrared region is demonstrated. A new technique of identifying coherent light sources using harmonic Fourier spectra analysis is developed. The system only includes a PZT-controlled gold-coated scan mirror and a partial-transparent (3.8% single-path loss) InP/InAlAs/InGaAs HPT. The close-loop scan range of PZT-controlled mirror is 32mum. With such mirror scan length, at the harmonic 5th order spectrum components, the resolution of the demonstrated interferometer is 37.5cm-1 with the free spectral range ∼340nm and central spectral position at 1500nm. The system resolution could reach 1 cm-1 with improved system design and elements selection.
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Indium gallium arsenide (InGaAs) based optoelectronic devices have been extensively investigated in the wavelength range extending from 800nm for gallium-rich material to 3mum for indium-rich material. A range of InGaAs alloys with bandgap energies in the near infrared wavelength range are investigated by solid-source molecular beam epitaxy (SSMBE). They include strain-free standard In0.532Ga0.468As and In0.532Ga0.468 AsNxSby lattice-matched to InP substrates, highly strained pseudomorphic InxGa1-xAs/InyGa 1-yAs quantum structures on InP substrates and relaxed metamorphic thick Inx>0.8Ga1-xAs device layers with cyclic arsenic-assisted in-situ annealed step-graded InAlAs buffer layers on GaAs and InP substrates. An InP/InAlAs/InGaAs heterojunction bipolar phototransistor (HPT) is designed, simulated and fabricated. The electrical and optical properties, such as responsivity and spectral response, of the HPT are characterized.
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Over the extremely broad electromagnetic spectrum, the near-infrared region (0.7--3 mum) is of great interests to physicists, chemists and biologists. Coherent photo-detection in the near-infrared as well as visible and other wavelength regions is extremely useful in identifying coherent light sources from the noisy background. It has great potential to be applied to single-molecule detection by surface-enhanced coherent anti-Stokes Raman scattering. Other applications include chemical gas detection, remote sensing and environmental monitoring, semiconductor processing control and others.
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