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Properties of advanced semiconductor...
~
Levinshtein, M. E.
Properties of advanced semiconductor materials :GaN, AlN, InN, BN, SiC, SiGe /
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Properties of advanced semiconductor materials :edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur.
其他題名:
GaN, AlN, InN, BN, SiC, SiGe /
其他作者:
Shur, Michael.
出版者:
New York :Wiley,2001.
面頁冊數:
xvii, 194 p. :ill. ;25 cm.
標題:
SemiconductorsMaterials.
電子資源:
http://www.loc.gov/catdir/toc/onix07/00042262.html
電子資源:
http://www.loc.gov/catdir/description/wiley035/00042262.html
ISBN:
9780471358274 (hbk.)
Properties of advanced semiconductor materials :GaN, AlN, InN, BN, SiC, SiGe /
Properties of advanced semiconductor materials :
GaN, AlN, InN, BN, SiC, SiGe /edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur. - New York :Wiley,2001. - xvii, 194 p. :ill. ;25 cm.
Includes bibliographical references.
ISBN: 9780471358274 (hbk.)
LCCN: 00042262 Subjects--Topical Terms:
197826
Semiconductors
--Materials.
LC Class. No.: QC611 / .P78 2001
Dewey Class. No.: 537.6/226
Properties of advanced semiconductor materials :GaN, AlN, InN, BN, SiC, SiGe /
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