國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

以溶膠凝膠法合成鈦酸鎳薄膜與粉末及其鑑定 = Synthesis and...

國立高雄大學應用化學系碩士班

以溶膠凝膠法合成鈦酸鎳薄膜與粉末及其鑑定 = Synthesis and Characterization of Nickel Titanate Thin Films and Powders Prepared by Sol-Gel Method

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Synthesis and Characterization of Nickel Titanate Thin Films and Powders Prepared by Sol-Gel Method
作者:	謝旼龍,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2009[民98]
面頁冊數:	93面圖、表 : 30公分;
標題:	介電常數
標題:	NiTiO3
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/22097967734044657581
附註:	參考書目：面81-84
附註:	指導教授：莊琇惠
摘要註:	在半導體元件不斷極小化時，產生了許多問題。如：閘極氧化層漏電流過大，導致元件性能降低。為了解決此問題，尋求適當的高介電材料，為一最佳的解決途徑。在眾多的高介電材料中，鈦酸鎳為在未來世代可能的選擇之一。傳統的固-固相法製備鈦酸鎳需要1000℃以上的高溫，且產物形態為粉末而非薄膜，無法應用在半導體製程上。在本論文中，主要利用鈦酸鎳四水合物及異丙醇鈦分別為鈦源和鎳源的試劑，並以二甲氧基乙醇作為溶劑，合成鈦酸鎳前驅液，再經由熱處理得到鈦酸鎳粉末及薄膜。研究中並使用SEM、XRD、ESCA、IR、UV-Vis及Raman等對所製備出的粉末及薄膜進行一系列的鑑定，並對其電性進行探討。研究結果顯示：當熱處理溫度為500℃，熱處理時間二十四小時，即可得到具結晶性的鈦酸鎳粉末。當熱處理時間固定為兩小時，熱處理溫度分別為550℃及600℃時，可得到純且結晶性良好的鈦酸鎳粉末和薄膜。鈦酸鎳粉末之介電常數為13.2-17.8。 Nickel titanate, NiTiO3, has received considerable research interest due to its chemical and electrical properties. This material is widely applicable in electrodes of solid oxide fuel cells, gas sensors, high performance catalysts, and etc. This material appears to be a promising high-k dielectric material (k > 40), providing a potential solution for current leaking problems in semiconductor devices.Researchers have traditionally prepared nickel titanate material by solid-solid reactions, with a process temperature that requires over 1000℃ treatment. This research prepares the precursor by reactions of nickel acetate tetrahydrate and Titanium isopropoxide in 2-methoxyethanol with 1:1 ratio of Ni/Ti in the solution. The structural evolution of NiTiO3 phase was accompanied by X-ray diffraction (XRD).Scanning electron microscope (SEM) determines film thickness and morphology. Analysis of both elemental compositions and chemical bonding characters of the thin films is achieved by Electron Spectroscopy for Chemical Analysis (ESCA). Spectroscopic characterization of thin films and powders was also done with UV-Vis diffuse reflection spectroscopy (UV-Vis DRS)、Micro-Raman Spectrometer (μ-Raman) and Fourier transform infrared (FT-IR) spectroscopy. The dielectric constant data is extracted from high frequency capacitance-voltage (C-V) studies with an LCR Meter.The results show that the pure NiTiO3 powder and film can be prepared via the sol-gel method and then heat-treated 550 and 600℃, respectively. The dielectric constants of powders are 13.2 - 17.8.

以溶膠凝膠法合成鈦酸鎳薄膜與粉末及其鑑定 = Synthesis and Characterization of Nickel Titanate Thin Films and Powders Prepared by Sol-Gel Method
謝, 旼龍

以溶膠凝膠法合成鈦酸鎳薄膜與粉末及其鑑定 = Synthesis and Characterization of Nickel Titanate Thin Films and Powders Prepared by Sol-Gel Method / 謝旼龍撰 - [高雄市] : 撰者, 2009[民98]. - 93面 ; 圖、表 ; 30公分.
參考書目：面81-84指導教授：莊琇惠.
介電常數NiTiO3

以溶膠凝膠法合成鈦酸鎳薄膜與粉末及其鑑定 = Synthesis and Characterization of Nickel Titanate Thin Films and Powders Prepared by Sol-Gel Method
LDR:03894nam a2200277 4500 001 220278
005 20170214091001.0
009 220278
010 0 $b 平裝
010 0 $b 精裝
100 $a 20170214y2009 k y0chiy09 ea
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 以溶膠凝膠法合成鈦酸鎳薄膜與粉末及其鑑定 $d Synthesis and Characterization of Nickel Titanate Thin Films and Powders Prepared by Sol-Gel Method $z eng $f 謝旼龍撰
210 $a [高雄市] $c 撰者 $d 2009[民98]
215 0 $a 93面 $c 圖、表 $d 30公分
300 $a 參考書目：面81-84
300 $a 指導教授：莊琇惠
328 $a 碩士論文--國立高雄大學應用化學系碩士班
330 $a 在半導體元件不斷極小化時，產生了許多問題。如：閘極氧化層漏電流過大，導致元件性能降低。為了解決此問題，尋求適當的高介電材料，為一最佳的解決途徑。在眾多的高介電材料中，鈦酸鎳為在未來世代可能的選擇之一。傳統的固-固相法製備鈦酸鎳需要1000℃以上的高溫，且產物形態為粉末而非薄膜，無法應用在半導體製程上。在本論文中，主要利用鈦酸鎳四水合物及異丙醇鈦分別為鈦源和鎳源的試劑，並以二甲氧基乙醇作為溶劑，合成鈦酸鎳前驅液，再經由熱處理得到鈦酸鎳粉末及薄膜。研究中並使用SEM、XRD、ESCA、IR、UV-Vis及Raman等對所製備出的粉末及薄膜進行一系列的鑑定，並對其電性進行探討。研究結果顯示：當熱處理溫度為500℃，熱處理時間二十四小時，即可得到具結晶性的鈦酸鎳粉末。當熱處理時間固定為兩小時，熱處理溫度分別為550℃及600℃時，可得到純且結晶性良好的鈦酸鎳粉末和薄膜。鈦酸鎳粉末之介電常數為13.2-17.8。 Nickel titanate, NiTiO3, has received considerable research interest due to its chemical and electrical properties. This material is widely applicable in electrodes of solid oxide fuel cells, gas sensors, high performance catalysts, and etc. This material appears to be a promising high-k dielectric material (k > 40), providing a potential solution for current leaking problems in semiconductor devices.Researchers have traditionally prepared nickel titanate material by solid-solid reactions, with a process temperature that requires over 1000℃ treatment. This research prepares the precursor by reactions of nickel acetate tetrahydrate and Titanium isopropoxide in 2-methoxyethanol with 1:1 ratio of Ni/Ti in the solution. The structural evolution of NiTiO3 phase was accompanied by X-ray diffraction (XRD).Scanning electron microscope (SEM) determines film thickness and morphology. Analysis of both elemental compositions and chemical bonding characters of the thin films is achieved by Electron Spectroscopy for Chemical Analysis (ESCA). Spectroscopic characterization of thin films and powders was also done with UV-Vis diffuse reflection spectroscopy (UV-Vis DRS)、Micro-Raman Spectrometer (μ-Raman) and Fourier transform infrared (FT-IR) spectroscopy. The dielectric constant data is extracted from high frequency capacitance-voltage (C-V) studies with an LCR Meter.The results show that the pure NiTiO3 powder and film can be prepared via the sol-gel method and then heat-treated 550 and 600℃, respectively. The dielectric constants of powders are 13.2 - 17.8.
510 1 $a Synthesis and Characterization of Nickel Titanate Thin Films and Powders Prepared by Sol-Gel Method
610 0 $a 介電常數 $a 旋轉塗佈法 $a 溶膠凝膠法 $a 鈦酸鎳 $a 高介電材料
610 1 $a NiTiO3 $a dielectric constant $a high-k materials $a sol-gel method $a spin coating
681 $a 008M/0019 $b 421202 0460 $v 2007年版
700 1 $a 謝 $b 旼龍 $4 撰 $3 353950
712 0 2 $a 國立高雄大學 $b 應用化學系碩士班 $3 166131
801 0 $a tw $b 國立高雄大學 $c 20091020 $g CCR
856 7 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/22097967734044657581