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成長氣氛與濺鍍功率對於磁控共濺鍍法成長之摻錳氧化鋅薄膜的物性影響研究 =...

國立高雄大學應用物理學系碩士班

成長氣氛與濺鍍功率對於磁控共濺鍍法成長之摻錳氧化鋅薄膜的物性影響研究 = Effects of growth ambient and sputtering power on the physical properties of Mn-doped ZnO thin films deposited using the magnetron co-sputtering method

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Effects of growth ambient and sputtering power on the physical properties of Mn-doped ZnO thin films deposited using the magnetron co-sputtering method
作者:	王喬右,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2010[民99]
面頁冊數:	93面圖，表 : 30公分;
標題:	氧化鋅
標題:	Mn
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/60856023422818365835
摘要註:	本論文研究以 RF 磁控共濺鍍法成長Zn1-xMnxO 稀磁性半導體薄膜，探討不同的製程氣氛(如：Ar、Ar+N2、Ar+O2)以及Mn靶濺鍍功率等實驗參數下，Zn1-xMnxO 薄膜在晶體結構、表面型態、光學性質、電性以及磁性等物理性質的變化，並希望能對於 Zn1-xMnxO 稀磁性半導體薄膜的磁性變化有所了解。從實驗結果顯示，當Mn 的濺鍍功率(PWMn)≧15 W 時，Zn1-xMnxO 薄膜中會出現Mn2O3 、Mn3O4 ，但在Ar+O2 的製程氣氛下所製作之Zn1-xMnxO 薄膜中並無發現此氧化物相。在Ar和Ar+N2 的製程氣氛下所製作的 Zn1-xMnxO 薄膜，光能隙會隨Mn 濃度增加而逐漸下降，此與氧化物的出現有關。此外，Zn1-xMnxO 薄膜的電阻率很高，且載子密度相當低，幾乎是絕緣性的。在製程氣氛為 Ar 和Ar+N2時，未摻雜的ZnO薄膜有較明顯的鐵磁訊號，而在 Ar+O2 製程氣氛下的ZnO 薄膜沒有鐵磁性。在300 K 時，在Ar、Ar+N2下所製作的Zn1-xMnxO薄膜，隨著PWMn的增加，飽和磁化量是上升的；而在Ar+O2下製作的Zn1-xMnxO 薄膜，飽和磁化量有些微下降。10 K 時，隨著PWMn的增加，所有Zn1-xMnxO 薄膜樣品的順磁性有增強的趨勢。 In this thesis, we report effects of different growth atmospheres, such as Ar、Ar+N2 and Ar+O2, and different sputtering powers of the Mn target on the crystal structural, surface morphological, optical, electrical, and magnetic properties of Mn-doped ZnO films deposited using the magnetron co-sputtering method. The aim of this work is to examine the possibility, as well as to realize the mechanism, of room-temperature ferromagnetism in Mn-doped ZnO films. Our results show that as the PWMn is higher than 15 W, little amounts of the Mn2O3 and Mn3O4 phases start to appear in the Mn-doped ZnO films grown under the Ar atmosphere. It is worthy noting that for the Mn-doped ZnO films grown under the Ar+O2 atmosphere, no Mn2O3 and Mn3O4 phases can be observed. For the Mn-doped ZnO films gown under the Ar or Ar+N2 atmosphere, the optical bandgap will increase with increasing the Mn content possibly due to the existence of Mn2O3 and Mn3O4 phases. In addition, all of the Mn-doped ZnO films are almost insulating due to a high electrical resistivity and a low carrier density. The pure ZnO films grown under the Ar or Ar+N2 atmosphere are ferromagnetic, while those grown under the Ar+O2 atmosphere have no ferromagnetic response. With increasing the PWMn, the saturation magnetization of the Mn-doped ZnO films grown under the Ar or Ar+N2 atmosphere will increase, while the saturation magnetization of those grown under the Ar+O2 atmosphere will decrease, at RT. In particular, all of the Mn-doped ZnO films exhibit a stronger paramagnetic signal at 10 K as the PWMn is increased.

成長氣氛與濺鍍功率對於磁控共濺鍍法成長之摻錳氧化鋅薄膜的物性影響研究 = Effects of growth ambient and sputtering power on the physical properties of Mn-doped ZnO thin films deposited using the magnetron co-sputtering method
王, 喬右

成長氣氛與濺鍍功率對於磁控共濺鍍法成長之摻錳氧化鋅薄膜的物性影響研究 = Effects of growth ambient and sputtering power on the physical properties of Mn-doped ZnO thin films deposited using the magnetron co-sputtering method / 王喬右撰 - [高雄市] : 撰者, 2010[民99]. - 93面 ; 圖，表 ; 30公分.
參考書目：面91-93.
氧化鋅Mn

成長氣氛與濺鍍功率對於磁控共濺鍍法成長之摻錳氧化鋅薄膜的物性影響研究 = Effects of growth ambient and sputtering power on the physical properties of Mn-doped ZnO thin films deposited using the magnetron co-sputtering method
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330 $a 本論文研究以 RF 磁控共濺鍍法成長Zn1-xMnxO 稀磁性半導體薄膜，探討不同的製程氣氛(如：Ar、Ar+N2、Ar+O2)以及Mn靶濺鍍功率等實驗參數下，Zn1-xMnxO 薄膜在晶體結構、表面型態、光學性質、電性以及磁性等物理性質的變化，並希望能對於 Zn1-xMnxO 稀磁性半導體薄膜的磁性變化有所了解。從實驗結果顯示，當Mn 的濺鍍功率(PWMn)≧15 W 時，Zn1-xMnxO 薄膜中會出現Mn2O3 、Mn3O4 ，但在Ar+O2 的製程氣氛下所製作之Zn1-xMnxO 薄膜中並無發現此氧化物相。在Ar和Ar+N2 的製程氣氛下所製作的 Zn1-xMnxO 薄膜，光能隙會隨Mn 濃度增加而逐漸下降，此與氧化物的出現有關。此外，Zn1-xMnxO 薄膜的電阻率很高，且載子密度相當低，幾乎是絕緣性的。在製程氣氛為 Ar 和Ar+N2時，未摻雜的ZnO薄膜有較明顯的鐵磁訊號，而在 Ar+O2 製程氣氛下的ZnO 薄膜沒有鐵磁性。在300 K 時，在Ar、Ar+N2下所製作的Zn1-xMnxO薄膜，隨著PWMn的增加，飽和磁化量是上升的；而在Ar+O2下製作的Zn1-xMnxO 薄膜，飽和磁化量有些微下降。10 K 時，隨著PWMn的增加，所有Zn1-xMnxO 薄膜樣品的順磁性有增強的趨勢。 In this thesis, we report effects of different growth atmospheres, such as Ar、Ar+N2 and Ar+O2, and different sputtering powers of the Mn target on the crystal structural, surface morphological, optical, electrical, and magnetic properties of Mn-doped ZnO films deposited using the magnetron co-sputtering method. The aim of this work is to examine the possibility, as well as to realize the mechanism, of room-temperature ferromagnetism in Mn-doped ZnO films. Our results show that as the PWMn is higher than 15 W, little amounts of the Mn2O3 and Mn3O4 phases start to appear in the Mn-doped ZnO films grown under the Ar atmosphere. It is worthy noting that for the Mn-doped ZnO films grown under the Ar+O2 atmosphere, no Mn2O3 and Mn3O4 phases can be observed. For the Mn-doped ZnO films gown under the Ar or Ar+N2 atmosphere, the optical bandgap will increase with increasing the Mn content possibly due to the existence of Mn2O3 and Mn3O4 phases. In addition, all of the Mn-doped ZnO films are almost insulating due to a high electrical resistivity and a low carrier density. The pure ZnO films grown under the Ar or Ar+N2 atmosphere are ferromagnetic, while those grown under the Ar+O2 atmosphere have no ferromagnetic response. With increasing the PWMn, the saturation magnetization of the Mn-doped ZnO films grown under the Ar or Ar+N2 atmosphere will increase, while the saturation magnetization of those grown under the Ar+O2 atmosphere will decrease, at RT. In particular, all of the Mn-doped ZnO films exhibit a stronger paramagnetic signal at 10 K as the PWMn is increased.
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