國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

氧化鋅奈米線電晶體之製備研究:應用奈米轉印法及介電泳法製作電極 = Pr...

國立高雄大學化學工程及材料工程學系碩士班

氧化鋅奈米線電晶體之製備研究:應用奈米轉印法及介電泳法製作電極 = Preparation of ZnO Nanowire transistors: using Nanotransfer and dielectrophoresis to fabricate electrodes

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Preparation of ZnO Nanowire transistors: using Nanotransfer and dielectrophoresis to fabricate electrodes
作者:	蘇和堅,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民99[2010]
面頁冊數:	115面圖，表 : 30公分;
標題:	奈米轉印技術
標題:	nanotransfer
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/68227633279720262437
摘要註:	相對於傳統的黃光微影製程，奈米轉印法被視為下一代的奈米微影技術，其擁有成本低、製程快速、可大量複製等優點。本論文乃結合奈米轉印法製備電極及介電泳法組裝氧化鋅奈米線以製作電晶體元件。其中氧化鋅奈米線屬於n型之寬能隙半導體材料，由於奈米線單晶的特性可以大幅提升載子遷移率，且具有高的體表面積比，未來可應用在氣體感測和光電元件上。本研究可分成四大部分，(一)水熱法成長氧化鋅奈米線；(二) 以UV固化高分子當作黏著/介電層，利用奈米轉印法製備電極；(三) 介電泳法排列奈米線；(四)量測電性變化。首先我們利用水熱法在90℃下，採用二階段合成高品質之單晶氧化鋅奈米線，並利用製程時間控制奈米線長度。此外，選用UV固化高分子，可以旋轉塗佈及曝光固化的方式，快速製作介電層，並利用此介電層當作黏著層直接轉印金屬電極圖案。在轉印金屬電極圖案的部分，可利用PDMS透氧的特性在UV固化黏著層表面蓋上PDMS，並調控照光時間使薄膜表面部分固化而具有黏性，使其在操作溫度80℃下可成功轉印金屬電極圖案。若在UV固化黏著層中加入多硫醇化合物PTMP則發現可降低表面Tg，並提升黏著層之黏著力，可以成功地在室溫下轉印金電極圖案。我們藉由原子力顯微鏡分析各種不同配方的黏著層表面構型和黏著力隨溫度增加的變化，可了解金層轉印的原理，並藉以調整轉印的操作條件。利用介電泳法可在1MHz交流電場下可在2 min內將氧化鋅奈米線排列在電極模具上，再利用UV固化黏著層當作介電層，以轉印方式將奈米線與金電極同步轉移到基材上，確保奈米線與金電極有較良好接觸。經由轉印製作奈米線電晶體其元件特性為臨界電壓Vth為3V，on/off ratio約為6，載子傳輸速率μ為348.4cm2/Vs，轉移電導值gm為2.55μS，次臨界擺幅S為3.72V/dec。接著將利用PMMA與UV固化黏著層形成複合式絕緣層，藉以增加元件電性的穩定度。 Nanotransfer technique has been developed as the next generation of nanolithography because of its low cost, rapid processing, and high throughput, as compared with traditional photolithography. The study applied the nanotransfer technique to fabricate the gold electrodes, and dielectrophoresis to align ZnO nanowires in order to assemble a transistor. The ZnO nanowire is n-type of semiconductor with a wide band gap. Its single crystalline type can significantly promote the carrier mobility and also perform high surface-to-volume ratio, leading to its potential in gas sensing and optoelectronics. Four parts in the study were included: (1) Preparation of ZnO nanowires by hydrothermal methods. (2) Nanotransfer techniques to fabricate gold electrodes by using UV-curable polymers as the adhesion and dielectric layer. (3) Alignment of nanowires by dielectrophoresis methods. (4) Measurement of electric properties of transistors. Firstly, we employed a two-staged hydrothermal method to prepare high-quality, single-crystalline ZnO nanowires. By changing the processing periods, the lengths of the nanowires were under control. Furthermore, by adjusting UV-curable polymer recipes, the dielectric and adhesion layer was spin-coated and UV-cured on a substrate to transfer gold electrodes. The novel technique was to use PDMS to cover the top of the adhesion layer and then to perform UV irradiation. The high oxygen diffusion in PDMS film led to partial curing on the outmost surfaces of the adhesion layer, enabling the use of adhering to gold-coated layer at 80 oC. We also added a multi-thiol compound to lower the surface Tg and enhance the adhesion force of the adhesion layer, resulting in successful transfer at room temperature. Atomic force microscopy was used to analyze the surface morphologies and the changes of adhesion force on the various adhesion surfaces with changing operating temperatures. The mechanism of metal transfer and the operation conditions of nanotransfer were also investigated. Using dielectrophoresis techniques could align the ZnO nanowires on the electrode mold under 1 MHz of AC within 2 min. The adhesion layer was then used to transfer nanowires and gold electrode simultaneously, ensuring well contact between wires and electrodes. In the measurement of electric properties, the nanowire transistor displayed a threshold voltage of 3V, a current on/off ratio of 6, a carrier mobility as high as 348.4cm2/Vs, a transconductance of 2.55 μS, and a subthreshold slope of 3.72V/dec。Then will use the PMMA and adhesive layer to form composite insulation layer, so as to increase the stability of electrical components.

氧化鋅奈米線電晶體之製備研究:應用奈米轉印法及介電泳法製作電極 = Preparation of ZnO Nanowire transistors: using Nanotransfer and dielectrophoresis to fabricate electrodes
蘇, 和堅

氧化鋅奈米線電晶體之製備研究:應用奈米轉印法及介電泳法製作電極 = Preparation of ZnO Nanowire transistors: using Nanotransfer and dielectrophoresis to fabricate electrodes / 蘇和堅撰 - [高雄市] : 撰者, 民99[2010]. - 115面 ; 圖，表 ; 30公分.
參考書目：面.
奈米轉印技術nanotransfer

氧化鋅奈米線電晶體之製備研究:應用奈米轉印法及介電泳法製作電極 = Preparation of ZnO Nanowire transistors: using Nanotransfer and dielectrophoresis to fabricate electrodes
LDR:06151nam0a2200277 450 001 272806
005 20170214094435.0
009 272806
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214y2010 k y0chiy05 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 氧化鋅奈米線電晶體之製備研究:應用奈米轉印法及介電泳法製作電極 $d Preparation of ZnO Nanowire transistors: using Nanotransfer and dielectrophoresis to fabricate electrodes $f 蘇和堅撰
210 $a [高雄市] $c 撰者 $d 民99[2010]
215 0 $a 115面 $c 圖，表 $d 30公分
314 $a 指導教授：鍾宜璋博士
320 $a 參考書目：面
328 $a 碩士論文--國立高雄大學化學工程及材料工程學系碩士班
330 $a 相對於傳統的黃光微影製程，奈米轉印法被視為下一代的奈米微影技術，其擁有成本低、製程快速、可大量複製等優點。本論文乃結合奈米轉印法製備電極及介電泳法組裝氧化鋅奈米線以製作電晶體元件。其中氧化鋅奈米線屬於n型之寬能隙半導體材料，由於奈米線單晶的特性可以大幅提升載子遷移率，且具有高的體表面積比，未來可應用在氣體感測和光電元件上。本研究可分成四大部分，(一)水熱法成長氧化鋅奈米線；(二) 以UV固化高分子當作黏著/介電層，利用奈米轉印法製備電極；(三) 介電泳法排列奈米線；(四)量測電性變化。首先我們利用水熱法在90℃下，採用二階段合成高品質之單晶氧化鋅奈米線，並利用製程時間控制奈米線長度。此外，選用UV固化高分子，可以旋轉塗佈及曝光固化的方式，快速製作介電層，並利用此介電層當作黏著層直接轉印金屬電極圖案。在轉印金屬電極圖案的部分，可利用PDMS透氧的特性在UV固化黏著層表面蓋上PDMS，並調控照光時間使薄膜表面部分固化而具有黏性，使其在操作溫度80℃下可成功轉印金屬電極圖案。若在UV固化黏著層中加入多硫醇化合物PTMP則發現可降低表面Tg，並提升黏著層之黏著力，可以成功地在室溫下轉印金電極圖案。我們藉由原子力顯微鏡分析各種不同配方的黏著層表面構型和黏著力隨溫度增加的變化，可了解金層轉印的原理，並藉以調整轉印的操作條件。利用介電泳法可在1MHz交流電場下可在2 min內將氧化鋅奈米線排列在電極模具上，再利用UV固化黏著層當作介電層，以轉印方式將奈米線與金電極同步轉移到基材上，確保奈米線與金電極有較良好接觸。經由轉印製作奈米線電晶體其元件特性為臨界電壓Vth為3V，on/off ratio約為6，載子傳輸速率μ為348.4cm2/Vs，轉移電導值gm為2.55μS，次臨界擺幅S為3.72V/dec。接著將利用PMMA與UV固化黏著層形成複合式絕緣層，藉以增加元件電性的穩定度。 Nanotransfer technique has been developed as the next generation of nanolithography because of its low cost, rapid processing, and high throughput, as compared with traditional photolithography. The study applied the nanotransfer technique to fabricate the gold electrodes, and dielectrophoresis to align ZnO nanowires in order to assemble a transistor. The ZnO nanowire is n-type of semiconductor with a wide band gap. Its single crystalline type can significantly promote the carrier mobility and also perform high surface-to-volume ratio, leading to its potential in gas sensing and optoelectronics. Four parts in the study were included: (1) Preparation of ZnO nanowires by hydrothermal methods. (2) Nanotransfer techniques to fabricate gold electrodes by using UV-curable polymers as the adhesion and dielectric layer. (3) Alignment of nanowires by dielectrophoresis methods. (4) Measurement of electric properties of transistors. Firstly, we employed a two-staged hydrothermal method to prepare high-quality, single-crystalline ZnO nanowires. By changing the processing periods, the lengths of the nanowires were under control. Furthermore, by adjusting UV-curable polymer recipes, the dielectric and adhesion layer was spin-coated and UV-cured on a substrate to transfer gold electrodes. The novel technique was to use PDMS to cover the top of the adhesion layer and then to perform UV irradiation. The high oxygen diffusion in PDMS film led to partial curing on the outmost surfaces of the adhesion layer, enabling the use of adhering to gold-coated layer at 80 oC. We also added a multi-thiol compound to lower the surface Tg and enhance the adhesion force of the adhesion layer, resulting in successful transfer at room temperature. Atomic force microscopy was used to analyze the surface morphologies and the changes of adhesion force on the various adhesion surfaces with changing operating temperatures. The mechanism of metal transfer and the operation conditions of nanotransfer were also investigated. Using dielectrophoresis techniques could align the ZnO nanowires on the electrode mold under 1 MHz of AC within 2 min. The adhesion layer was then used to transfer nanowires and gold electrode simultaneously, ensuring well contact between wires and electrodes. In the measurement of electric properties, the nanowire transistor displayed a threshold voltage of 3V, a current on/off ratio of 6, a carrier mobility as high as 348.4cm2/Vs, a transconductance of 2.55 μS, and a subthreshold slope of 3.72V/dec。Then will use the PMMA and adhesive layer to form composite insulation layer, so as to increase the stability of electrical components.
510 1 $a Preparation of ZnO Nanowire transistors: using Nanotransfer and dielectrophoresis to fabricate electrodes
610 0 $a 奈米轉印技術 $a 奈米線電晶體 $a 介電泳法 $a UV固化黏著層 $a 氧化鋅奈米線
610 1 $a nanotransfer $a nanowire transistor $a dielectrophoresis $a UV-curable adhesion layer $a ZnO nanowires
681 $a 008M/0019 $b 541208 4427 $v 2007年版
700 1 $a 蘇 $b 和堅 $4 撰 $3 482972
712 0 2 $a 國立高雄大學 $b 化學工程及材料工程學系碩士班 $3 353898
801 0 $a tw $b 國立高雄大學 $c 20101227 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/68227633279720262437