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氮化鎵發光二極體背面反射結構之研究 = Studies of GaN L...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

氮化鎵發光二極體背面反射結構之研究 = Studies of GaN LED with different reflective structure

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Studies of GaN LED with different reflective structure
作者:	黃文彥,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民99[2010]
面頁冊數:	60面圖，表 : 30公分;
標題:	壓印
標題:	Impint
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/57627495956536180224
摘要註:	本論文研究不同背光反射結構，對氮化鎵發光二極體晶粒光電特性的影響。以製作之模仁，利用壓印的方法，在旋塗式玻璃塗佈光阻/基板上製作各種圖案化結構，再於其上蒸鍍金屬，製作圖案化反射結構。將氮化鎵發光二極體晶粒與之結合，進行發光二極體光電特性量測。圖案化背光結構改可改變發光二極體晶粒之光場強度分佈，並提高輸出光強度與最大光功率操作電流。本論文同時探討此圖案化背光結構，對於在平面式氧化鋁基板與圖案化氧化鋁基板上，磊晶之氮化鎵發光二極體晶粒，光電特性的影響。 The GaN chips with different backside reflective pattern were studied. The backside reflective substrate was performed on spin-on-glass photoresist/glass substrate with imprinted structure followed by thermal evaporated aluminum reflector. The GaN chip was then mounted on the reflective substrate fabricated with different process parameters. The electrical and optical properties were studied. Different light intensity patterns were characterized for chip on different backside reflective structure. The operating current with maximum light output power can be increased with suitable backside reflective structure. Both chips with conventional and patterned sapphire substrate with different reflective structure were studied.

氮化鎵發光二極體背面反射結構之研究 = Studies of GaN LED with different reflective structure
黃, 文彥

氮化鎵發光二極體背面反射結構之研究 = Studies of GaN LED with different reflective structure / 黃文彥撰 - [高雄市] : 撰者, 民99[2010]. - 60面 ; 圖，表 ; 30公分.
參考書目：面.
壓印Impint

氮化鎵發光二極體背面反射結構之研究 = Studies of GaN LED with different reflective structure
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328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
330 $a 本論文研究不同背光反射結構，對氮化鎵發光二極體晶粒光電特性的影響。以製作之模仁，利用壓印的方法，在旋塗式玻璃塗佈光阻/基板上製作各種圖案化結構，再於其上蒸鍍金屬，製作圖案化反射結構。將氮化鎵發光二極體晶粒與之結合，進行發光二極體光電特性量測。圖案化背光結構改可改變發光二極體晶粒之光場強度分佈，並提高輸出光強度與最大光功率操作電流。本論文同時探討此圖案化背光結構，對於在平面式氧化鋁基板與圖案化氧化鋁基板上，磊晶之氮化鎵發光二極體晶粒，光電特性的影響。 The GaN chips with different backside reflective pattern were studied. The backside reflective substrate was performed on spin-on-glass photoresist/glass substrate with imprinted structure followed by thermal evaporated aluminum reflector. The GaN chip was then mounted on the reflective substrate fabricated with different process parameters. The electrical and optical properties were studied. Different light intensity patterns were characterized for chip on different backside reflective structure. The operating current with maximum light output power can be increased with suitable backside reflective structure. Both chips with conventional and patterned sapphire substrate with different reflective structure were studied.
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