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光阻及底層材料在極紫外光微影13.5奈米照射下的光物理及光化學性質研究 ...

國立高雄大學應用化學系碩士班

光阻及底層材料在極紫外光微影13.5奈米照射下的光物理及光化學性質研究 = Photophysical and photochemical properties of photoresists and underlayer materials for extreme ultraviolet lithography upon irradiation at 13.5 nm

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Photophysical and photochemical properties of photoresists and underlayer materials for extreme ultraviolet lithography upon irradiation at 13.5 nm
作者:	康富修,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民99[2010]
面頁冊數:	97面圖，表 : 30公分;
標題:	13.5 nm
標題:	13.5 nm
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/24650137962364371719
摘要註:	13.5 nm極紫外光(EUV)為下個世代量產線寬為22 nm以下微影成像技術中的首選光源。本研究使用國家同步輻射建造之EUV反射儀，量測round robin光阻、壓克力(PMMA)光阻及13種尚在研發的EUV底層材料的鏡面反射率曲線，進而求得這些薄膜樣品折射率(n)、吸收係數(σabs)與厚度(T)；此三項物質的光學性質為設計光阻配方微影成像的關鍵參數。本研究進一步探討薄膜樣品經13.5奈米光源照射後，光物理性質(n, σabs, T )的變化，進而成功地得到薄膜厚度損失與樣品的(σabs/單位碳原子的等同雙鍵數)參數，(σabs/ double bond equivalence per carbon)呈線性關係；此成果顯示，本研究所開發出來的EUV反射儀量測方法能做臨場(in situ)、在此波長(actinic)薄膜樣品的抗EUV輻射性評估。樣品厚度上的損失，主要原因是樣品經EUV光照射後產生的剝蝕效應所致；而藉由EUV反射儀所測得的樣品膜厚損失與累積曝光劑量的關係，可推導出round robin光阻剝蝕速率約為(0.12±0.02) nm cm2 mJ-1，PMMA光阻剝蝕速率約為(0.32±0.15) nm cm2 mJ-1。本實驗使用雙離子腔法量測光阻及底層材料的絕對離子釋氣產率約在10-3的數量級，進而推導出離子釋氣之逃脫深度僅至表面0.2 nm處。本研究以壓力上升法及四極桿質譜儀量測樣品照光後剝離離子及中性碎片的釋氣量，進行薄膜材料厚度與釋氣量的關係研究，結果顯示釋氣量應與材料結構相關，而與薄膜材料厚度無關-此結論與離子逃脫深度之結果相符。 Extreme ultraviolet (EUV) light at 13.5 nm is expected to be the most likely light source for the next generation lithography beyond the 22 nm technology node. This study uses EUV reflectometer, which was constructed by National Synchrotron Radiation Research Center, to measure specular reflectivity curves of round robin resist (RRR), polymethylmethacrylate (PMMA) resist and 13 R&D underlayer material, and derives the refractive index (n), absorption coefficient (σabs), and film thickness (T) of the samples from these reflectivity curves; the n, σabs, and thickness values are key parameters for the design of resist lithographic patterning. This work also studies the evolution of (n, σabs, T) of the thin film samples and successfully obtain a satisfactory linear correlation between thickness loss of films and the structural parameter (σabs /double bond equivalence per carbon). The result demonstrates that the reflectivity measurement procedures developed by this work with the EUV reflectometer is an in-situ and actinic means to evaluate the EUV radiation resistance of thin film samples. The thickness loss of samples is mainly due to an ablation effect upon EUV radiation. From the correlation between the thin film thickness loss and the accumulated exposure dose, the ablation rate for RRR and PMMA are obtained as (0.12±0.02) and(0.32 ± 0.15) nm cm2 mJ-1, respectively. This work measures the absolute ionic outgassing yield (AIOY) of resists and underlayer materials by a double-ion chamber method. The AIOY values of these samples are all of in the order of 10-3. From these AIOY value, the escape depth for ions can be derived as approximately 0.2 nm from surface. A pressure rise method and quadrupole mass spectrometry (QMS) are utilized to study the dependence between thin film thickness and the extent of outgassing amount, and the result suggests that the amount of outgassing are dependent on material structures and independent on the film thickness – the result consists with what has been concluded on the ion escape depth.

光阻及底層材料在極紫外光微影13.5奈米照射下的光物理及光化學性質研究 = Photophysical and photochemical properties of photoresists and underlayer materials for extreme ultraviolet lithography upon irradiation at 13.5 nm
康, 富修

光阻及底層材料在極紫外光微影13.5奈米照射下的光物理及光化學性質研究 = Photophysical and photochemical properties of photoresists and underlayer materials for extreme ultraviolet lithography upon irradiation at 13.5 nm / 康富修撰 - [高雄市] : 撰者, 民99[2010]. - 97面 ; 圖，表 ; 30公分.
參考書目：面.
13.5 nm13.5 nm

光阻及底層材料在極紫外光微影13.5奈米照射下的光物理及光化學性質研究 = Photophysical and photochemical properties of photoresists and underlayer materials for extreme ultraviolet lithography upon irradiation at 13.5 nm
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