國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Optoelectronic devicesIII-nitrides /

Henini, Mohamed.

Optoelectronic devicesIII-nitrides /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Optoelectronic devicesM. Razeghi, M. Henini.
其他題名:	III-nitrides /
作者:	Razeghi, M.
其他作者:	Henini, Mohamed.
出版者:	Amsterdam ;Elsevier,2004.
面頁冊數:	1 online resource (xv, 575 p.) :ill.
標題:	Optoelectronic devices.
電子資源:	http://www.sciencedirect.com/science/book/9780080444260
ISBN:	9780080444260

Optoelectronic devicesIII-nitrides /
Razeghi, M.

Optoelectronic devicesIII-nitrides /[electronic resource] :M. Razeghi, M. Henini. - Amsterdam ;Elsevier,2004. - 1 online resource (xv, 575 p.) :ill.

Includes bibliographical references and index.

The rise of III-nitrides : an introduction -- The evolution of nitride semiconductors -- Technology of MOVPE production tools -- MOCVD growth of Group III nitrides for high-power, high-frequency applications -- Growth of nitride quantum dots -- A1N epitaxial layers for UV photonics -- Properties of III-V Nitrides substrates and homoepitaxial layers -- III-nitride ultraviolet light emitting sources -- III-nitride UV photoconductors -- Quaternary InAlGaN-based UV LEDs -- design and fabrication of GaN high power rectifiers -- GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices -- Ferromagnetism in GaN and related materials -- Phonons and electron-phonon interactions in III-nitride bulk and dimensionally confined semiconductors and their device implications -- Phase separation and ordering in cubic ternary and quaternary nitride alloys -- Electronic properties of intrinsic and heavily doped 3C-, nH-SiC (n=2, 4, 6) and III-N (III=B, Al, Ga, In).

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides.

ISBN: 9780080444260

Source: 104610:104633Elsevier Science & Technologyhttp://www.sciencedirect.comSubjects--Topical Terms:

181962
Optoelectronic devices.
Index Terms--Genre/Form:

214472
Electronic books.

LC Class. No.: TA1750 / .R39 2004eb

Dewey Class. No.: 621.38152

Optoelectronic devicesIII-nitrides /
LDR:03017cmm 2200337Ia 4500 001 314063
003 OCoLC
005 20111122091028.0
006 m d
007 cr cn|||||||||
008 111229s2004 ne a ob 001 0 eng d
020 $a 9780080444260
020 $a 0080444261
029 1 $a NZ1 $b 12432682
035 $a (OCoLC)162130034
035 $a ocn162130034
037 $a 104610:104633 $b Elsevier Science & Technology $n http://www.sciencedirect.com
040 $a OPELS $b eng $c OPELS $d OKU $d OCLCQ
049 $a TEFA
050 4 $a TA1750 $b .R39 2004eb
072 7 $a TK $2 lcco
082 0 4 $a 621.38152 $2 22
100 1 $a Razeghi, M. $3 241992
245 1 0 $a Optoelectronic devices $h [electronic resource] : $b III-nitrides / $c M. Razeghi, M. Henini.
260 $a Amsterdam ; $a San Diego ; $a Oxford : $b Elsevier, $c 2004.
300 $a 1 online resource (xv, 575 p.) : $b ill.
504 $a Includes bibliographical references and index.
505 0 $a The rise of III-nitrides : an introduction -- The evolution of nitride semiconductors -- Technology of MOVPE production tools -- MOCVD growth of Group III nitrides for high-power, high-frequency applications -- Growth of nitride quantum dots -- A1N epitaxial layers for UV photonics -- Properties of III-V Nitrides substrates and homoepitaxial layers -- III-nitride ultraviolet light emitting sources -- III-nitride UV photoconductors -- Quaternary InAlGaN-based UV LEDs -- design and fabrication of GaN high power rectifiers -- GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices -- Ferromagnetism in GaN and related materials -- Phonons and electron-phonon interactions in III-nitride bulk and dimensionally confined semiconductors and their device implications -- Phase separation and ordering in cubic ternary and quaternary nitride alloys -- Electronic properties of intrinsic and heavily doped 3C-, nH-SiC (n=2, 4, 6) and III-N (III=B, Al, Ga, In).
520 $a Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides.
588 $a Description based on print version record.
650 0 $a Optoelectronic devices. $3 181962
650 0 $a Nitrides. $3 234923
655 4 $a Electronic books. $2 local. $3 214472
700 1 $a Henini, Mohamed. $3 247890
776 0 8 $i Print version: $a Razeghi, M. $t Optoelectronic devices. $d Amsterdam ; San Diego ; Oxford : Elsevier, 2004 $z 0080444261 $z 9780080444260 $w (OCoLC)56657528
856 4 0 $3 ScienceDirect $u http://www.sciencedirect.com/science/book/9780080444260
994 $a C0 $b TEF