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Competing for the Future :How Digita...

Ebooks Corporation.

Competing for the Future :How Digital Innovations are Changing the World.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Competing for the Future :
其他題名:	How Digital Innovations are Changing the World.
作者:	Kressel, Henry.
其他作者:	Lento, Thomas V.
出版者:	Leiden :Cambridge University Press,2007.
面頁冊數:	423 p.
標題:	Technological innovations.
電子資源:	Click here to view book
ISBN:	9780511611094 (electronic bk.)

Competing for the Future :How Digital Innovations are Changing the World.
Kressel, Henry.

Competing for the Future :How Digital Innovations are Changing the World.[electronic resource]. - Leiden :Cambridge University Press,2007. - 423 p.

Cover; Half-title; Title; Copyright; Dedication; Contents; Figures; Tables; Acknowledgements; Introduction ��Competing for the future: How digital innovations are changing the world; Defining innovation; Building the digital world; Innovation on a global scale; The new world order; PART I: The technology ��how electronic devices work ��digital systems and software; 1 Genesis: Inventing electronics for the digital world; 2 Building digital systems; PART II: Innovators, entrepreneurs, and venture capitalists; 3 Edison�� legacy: Industrial R&D; 4 R&D goes global

An explanation of how digital technology works, why it matters and how it is financed.

Electronic reproduction.

Available via World Wide Web.

Mode of access: World Wide Web.

ISBN: 9780511611094 (electronic bk.)Subjects--Topical Terms:

184332
Technological innovations.
Index Terms--Genre/Form:

214472
Electronic books.

LC Class. No.: T173.8 .K74 2007eb

Dewey Class. No.: 338.064

Competing for the Future :How Digital Innovations are Changing the World.
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505 8 $a 5 Financing innovation: Venture capitalPART III: Global reach, global repercussions; 6 Manufacturing: Globalizing faster than ever; 7 Your government is here to help; 8 The digital world: Industries transformed; 9 The digital world: A global village; Appendix 1.1: Smaller, faster, more efficient MOSFETs; Appendix 1.2: Building multi-transistor logic gates; Appendix 1.3: MOSFETs in memory devices; Appendix 1.4: CMOS reduces logic gate power dissipation; App
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