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氫氬電漿對氧化鋅奈米柱之改質與光電性質的研究 = Optoelectro...

國立高雄大學化學工程及材料工程學系碩士班

氫氬電漿對氧化鋅奈米柱之改質與光電性質的研究 = Optoelectronic Properties of Zinc Oxide Nanorods Modified by H2/Ar Plasma

Record Type:	Language materials, printed : monographic
Paralel Title:	Optoelectronic Properties of Zinc Oxide Nanorods Modified by H2/Ar Plasma
Author:	鄭喬方,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2012[民101]
Description:	91面圖，表格 : 30公分;
Subject:	氧化鋅
Subject:	ZnO
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/08163738898018809416
Notes:	參考書目：面76-80
Summary:	本研究以水溶液法製備氧化鋅奈米柱，並探討不同氫氬混合比例的電漿處理對其光電性質的影響。藉由掃描式電子顯微鏡(SEM)可觀察到氧化鋅奈米柱在純氫和氫氬混合電漿處理後(0002)面有被蝕刻的痕跡，而經由穿透式電子顯微鏡(TEM)分析可知氫氬混合電漿處理後奈米柱有局部晶格扭曲的區域。室溫陰極發光(CL)光譜則顯示，奈米柱在純氫或氫氬摻半混合電漿處理後，紫外光發光強度皆有增強。特別的是，氫氬混合電漿處理後的紫外光強度和熱穩定性皆較純氫電漿處理的奈米柱更佳。二次離子質譜儀的縱深分析顯示各組電漿處理的氧化鋅奈米柱在退火前後氫含量分佈的變化：氫氬混合電漿處理後的氫於表面處最多，且氫濃度不易因熱處理而降低；而純氫電漿處理後的氫較均勻分布於內部，但氫濃度會因熱處理而大幅降低。紫外光光感測的測試結果顯示經純氫電漿處理及氫氬摻半混合電漿處理後的氧化鋅奈米柱其光響應率、靈敏度，及響應速度皆得到提升。本研究提出新穎的電漿處理方式提昇氧化鋅奈米柱的發光強度、熱穩定性，及光感測性能，其在光電元件之應用極有潛力。 In this study, we prepared ZnO nanorod (NR) arrays by solution method and investigated the opto-electrical properties of ZnO NRs treated with H2, Ar, and H2/Ar mixed plasma with different ratio flow rate. Scanning electron microscopic (SEM) images show that the NRs exhibit etched morphology on (0002) planes after being treated by plasmas with H2/Ar flow rate of 15/15 or 30/0 sccm/sccm. In addition, transmission electron microscopic (TEM) shows obvious lattice distortion-induced small spots existing in the NRs treated with H2/Ar mixed plasma. Cathodoluminescence (CL) characterization show that the NRs treated with H2 and H2/Ar mixed plasma exhibits enhanced ultraviolet emissions. Notably, the ZnO treated with H2/Ar mixed plasma shows much better thermal stability than the ones only treated by H2 plasma. Secondary ion mass spectra show that the hydrogen distributions in ZnO NR films are varied after annealing for different plasma treated-samples. Ultraviolet-response measurements show that the sensitivity, photoresponsivity, and response speed of the ZnO NRs are highly improved by treating with H2/Ar plasma flow rate of 30/0 or 15/15 sccm/sccm. The work proposes a novel route to enhance the luminescence, photoresponse, and thermal stability of ZnO NRs, which are promising for optoelectronics application.

氫氬電漿對氧化鋅奈米柱之改質與光電性質的研究 = Optoelectronic Properties of Zinc Oxide Nanorods Modified by H2/Ar Plasma
鄭, 喬方

氫氬電漿對氧化鋅奈米柱之改質與光電性質的研究 = Optoelectronic Properties of Zinc Oxide Nanorods Modified by H2/Ar Plasma / 鄭喬方撰 - [高雄市] : 撰者, 2012[民101]. - 91面 ; 圖，表格 ; 30公分.
參考書目：面76-80.
氧化鋅ZnO

氫氬電漿對氧化鋅奈米柱之改質與光電性質的研究 = Optoelectronic Properties of Zinc Oxide Nanorods Modified by H2/Ar Plasma
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330 $a 本研究以水溶液法製備氧化鋅奈米柱，並探討不同氫氬混合比例的電漿處理對其光電性質的影響。藉由掃描式電子顯微鏡(SEM)可觀察到氧化鋅奈米柱在純氫和氫氬混合電漿處理後(0002)面有被蝕刻的痕跡，而經由穿透式電子顯微鏡(TEM)分析可知氫氬混合電漿處理後奈米柱有局部晶格扭曲的區域。室溫陰極發光(CL)光譜則顯示，奈米柱在純氫或氫氬摻半混合電漿處理後，紫外光發光強度皆有增強。特別的是，氫氬混合電漿處理後的紫外光強度和熱穩定性皆較純氫電漿處理的奈米柱更佳。二次離子質譜儀的縱深分析顯示各組電漿處理的氧化鋅奈米柱在退火前後氫含量分佈的變化：氫氬混合電漿處理後的氫於表面處最多，且氫濃度不易因熱處理而降低；而純氫電漿處理後的氫較均勻分布於內部，但氫濃度會因熱處理而大幅降低。紫外光光感測的測試結果顯示經純氫電漿處理及氫氬摻半混合電漿處理後的氧化鋅奈米柱其光響應率、靈敏度，及響應速度皆得到提升。本研究提出新穎的電漿處理方式提昇氧化鋅奈米柱的發光強度、熱穩定性，及光感測性能，其在光電元件之應用極有潛力。 In this study, we prepared ZnO nanorod (NR) arrays by solution method and investigated the opto-electrical properties of ZnO NRs treated with H2, Ar, and H2/Ar mixed plasma with different ratio flow rate. Scanning electron microscopic (SEM) images show that the NRs exhibit etched morphology on (0002) planes after being treated by plasmas with H2/Ar flow rate of 15/15 or 30/0 sccm/sccm. In addition, transmission electron microscopic (TEM) shows obvious lattice distortion-induced small spots existing in the NRs treated with H2/Ar mixed plasma. Cathodoluminescence (CL) characterization show that the NRs treated with H2 and H2/Ar mixed plasma exhibits enhanced ultraviolet emissions. Notably, the ZnO treated with H2/Ar mixed plasma shows much better thermal stability than the ones only treated by H2 plasma. Secondary ion mass spectra show that the hydrogen distributions in ZnO NR films are varied after annealing for different plasma treated-samples. Ultraviolet-response measurements show that the sensitivity, photoresponsivity, and response speed of the ZnO NRs are highly improved by treating with H2/Ar plasma flow rate of 30/0 or 15/15 sccm/sccm. The work proposes a novel route to enhance the luminescence, photoresponse, and thermal stability of ZnO NRs, which are promising for optoelectronics application.
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