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(1)在13.5奈米光照射下光敏性薄膜的光剝蝕研究(2)小型有機分子在5...

國立高雄大學應用化學系碩士班

(1)在13.5奈米光照射下光敏性薄膜的光剝蝕研究(2)小型有機分子在5.5 -150 eV的絕對光吸收及光游離研究 = (1)Photo-ablation of photosensitive films upon irradiation at 13.5 nm(2)Photoabsorption and photoionization of small organic compounds in 5.5 eV-150 eV range

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	(1)Photo-ablation of photosensitive films upon irradiation at 13.5 nm(2)Photoabsorption and photoionization of small organic compounds in 5.5 eV-150 eV range
作者:	宋佳展,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2012[民101]
面頁冊數:	112面圖，表格 : 30公分;
標題:	EUV反射儀
標題:	EUV reflectometer
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/35975394033442633357
附註:	含參考書目
摘要註:	(1)13.5 nm 極紫外光(Extreme ultraviolet,EUV)為量產線寬為16 nm以下，下個世代微影成像技術中的首選光源。對於開發的 EUV光敏材料，其13.5 nm的光學折射率（n）和光吸收係數和薄膜厚度（T）是用來最佳化光阻曝光成像及模擬計算所需之光學參數的。所有元素在EUV範圍具有不可忽略的光吸收係數。在量測EUV光化學性質時，光敏材料可能也同時遭到EUV輻射破壞；因此本研究開發出以SEUVR(Specular EUV Reflectometer)鏡面極紫外光反射儀法量測方法加入曝光控制並成功地展示以SEUVR法從事線上(in line)、在此波長(actinic)對光敏薄膜樣品的抗EUV 光蝕刻評估。(2)在EUV(extreme ultraviolet,極紫外光區)的光吸收和光游離的研究數量較紫外、真空紫外或硬X光區研究少很多，且多限於簡單的原子或是簡單的氣體分子。近來因EUV微影技術將會被應用在未來16 nm IC製造技術節點，因此EUV光區的光化學愈顯重要。現行的微影光阻配方通常含有約 10- 20 wt％的溶劑殘留於薄膜中以進行後續製程。有機溶劑含碳、氫、氧的各種結構組合，故研究這些分子的EUV光吸收不僅可以了解最基礎的EUV光與這些物質作用現象更可以應用於微影薄膜材料的光化學。本研究針對Xe及12有機溶劑量測其大能量範圍的絕對光吸收截面積，並將結果與原子散射理埨計算出的理埨值做比較，進而界定出此理論可行的能量範圍。在5.5 eV~150 eV光能量範圍的絕對光吸收與光游離的測量儀器為吸收管/雙離子腔的真空系統，量測光源則分別使用國家同步輻射研究中心03A1、04B1及08A1光束線光束線。量測所得的Xe與Benzene 結果與文獻值的差異在±10%之間。而Xe及12種有機分子的絕對光吸收截面積值與有限文獻值比較，結果顯示以光子量測到的誤差多在±9%之內；與擬光子電子撞擊所得的值在30-43 eV顯示系統性的誤差約7-14%正偏差。在70-80 eV顯示有系統性的誤差約5-19%的負偏差；而與原子散射理論計算值在60-110 eV能量範圍近似，在110-150 eV有系統性的誤差約13-30%的正偏差。 (1)Extreme ultraviolet (EUV) light at 13.5 nm is the most likely light source for the next generation lithography beyond the 16 nm technology node. For developing EUV photoresist materials,optical properties of refractive index (n) and photoabsorption coefficient at 13.5 nm and the thin-film thickness (T) are needed for optimization of resist patterning. All elements absorb EUV light: while measuring the optical properties, thin film samples may already be damaged. This work studies the photoablation effect of photosensitive films upon 13.5 nm irradiation by in-line exposure and actinic inspection with specular EUV reflectometry.(2)Studies on EUV (extreme ultraviolet) photoabsorption are sparser than those on VU, VUV or core-level photoabsorption, and they are limited to atoms and simple gas molecules. EUV photochemistry of organic materials has its practical use in the most advanced IC manufacturing by EUV lithography. Typical photoresist contains about 10 - 20 wt% of solvent, these organic solvents contain carbon, hydrogen and oxygen in various compositions and structures; therefore, photoabsorption of solvents is not only of fundamental importance but has its industrial applications. Absolute photoabsorption cross sections of Xe and twelve solvents were measured with a double ion chamber in an extensive 6-150eV energy range. The measured values compared to limited literature values, cross sections among photon measurements are consistent within ±10%, whereas our values of benzene, dimethyl ether and ethanol are 5-15% systematically lower in the 30 – 43 eV region but 5-20% higher in the 70 – 80 eV region than those reported by the (e, e) measurements. Our values are systematically higher than the theoretical numbers in 40-70 eV region, and gradually become lower than theirs; the theoretical values predict 10-30% higher values than those by photon measurements at 150 eV

(1)在13.5奈米光照射下光敏性薄膜的光剝蝕研究(2)小型有機分子在5.5 -150 eV的絕對光吸收及光游離研究 = (1)Photo-ablation of photosensitive films upon irradiation at 13.5 nm(2)Photoabsorption and photoionization of small organic compounds in 5.5 eV-150 eV range
宋, 佳展

(1)在13.5奈米光照射下光敏性薄膜的光剝蝕研究(2)小型有機分子在5.5 -150 eV的絕對光吸收及光游離研究 = (1)Photo-ablation of photosensitive films upon irradiation at 13.5 nm(2)Photoabsorption and photoionization of small organic compounds in 5.5 eV-150 eV range / 宋佳展撰 - [高雄市] : 撰者, 2012[民101]. - 112面 ; 圖，表格 ; 30公分.
含參考書目.
EUV反射儀EUV reflectometer

(1)在13.5奈米光照射下光敏性薄膜的光剝蝕研究(2)小型有機分子在5.5 -150 eV的絕對光吸收及光游離研究 = (1)Photo-ablation of photosensitive films upon irradiation at 13.5 nm(2)Photoabsorption and photoionization of small organic compounds in 5.5 eV-150 eV range
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328 $a 碩士論文--國立高雄大學應用化學系碩士班
330 $a (1)13.5 nm 極紫外光(Extreme ultraviolet,EUV)為量產線寬為16 nm以下，下個世代微影成像技術中的首選光源。對於開發的 EUV光敏材料，其13.5 nm的光學折射率（n）和光吸收係數和薄膜厚度（T）是用來最佳化光阻曝光成像及模擬計算所需之光學參數的。所有元素在EUV範圍具有不可忽略的光吸收係數。在量測EUV光化學性質時，光敏材料可能也同時遭到EUV輻射破壞；因此本研究開發出以SEUVR(Specular EUV Reflectometer)鏡面極紫外光反射儀法量測方法加入曝光控制並成功地展示以SEUVR法從事線上(in line)、在此波長(actinic)對光敏薄膜樣品的抗EUV 光蝕刻評估。(2)在EUV(extreme ultraviolet,極紫外光區)的光吸收和光游離的研究數量較紫外、真空紫外或硬X光區研究少很多，且多限於簡單的原子或是簡單的氣體分子。近來因EUV微影技術將會被應用在未來16 nm IC製造技術節點，因此EUV光區的光化學愈顯重要。現行的微影光阻配方通常含有約 10- 20 wt％的溶劑殘留於薄膜中以進行後續製程。有機溶劑含碳、氫、氧的各種結構組合，故研究這些分子的EUV光吸收不僅可以了解最基礎的EUV光與這些物質作用現象更可以應用於微影薄膜材料的光化學。本研究針對Xe及12有機溶劑量測其大能量範圍的絕對光吸收截面積，並將結果與原子散射理埨計算出的理埨值做比較，進而界定出此理論可行的能量範圍。在5.5 eV~150 eV光能量範圍的絕對光吸收與光游離的測量儀器為吸收管/雙離子腔的真空系統，量測光源則分別使用國家同步輻射研究中心03A1、04B1及08A1光束線光束線。量測所得的Xe與Benzene 結果與文獻值的差異在±10%之間。而Xe及12種有機分子的絕對光吸收截面積值與有限文獻值比較，結果顯示以光子量測到的誤差多在±9%之內；與擬光子電子撞擊所得的值在30-43 eV顯示系統性的誤差約7-14%正偏差。在70-80 eV顯示有系統性的誤差約5-19%的負偏差；而與原子散射理論計算值在60-110 eV能量範圍近似，在110-150 eV有系統性的誤差約13-30%的正偏差。 (1)Extreme ultraviolet (EUV) light at 13.5 nm is the most likely light source for the next generation lithography beyond the 16 nm technology node. For developing EUV photoresist materials,optical properties of refractive index (n) and photoabsorption coefficient at 13.5 nm and the thin-film thickness (T) are needed for optimization of resist patterning. All elements absorb EUV light: while measuring the optical properties, thin film samples may already be damaged. This work studies the photoablation effect of photosensitive films upon 13.5 nm irradiation by in-line exposure and actinic inspection with specular EUV reflectometry.(2)Studies on EUV (extreme ultraviolet) photoabsorption are sparser than those on VU, VUV or core-level photoabsorption, and they are limited to atoms and simple gas molecules. EUV photochemistry of organic materials has its practical use in the most advanced IC manufacturing by EUV lithography. Typical photoresist contains about 10 - 20 wt% of solvent, these organic solvents contain carbon, hydrogen and oxygen in various compositions and structures; therefore, photoabsorption of solvents is not only of fundamental importance but has its industrial applications. Absolute photoabsorption cross sections of Xe and twelve solvents were measured with a double ion chamber in an extensive 6-150eV energy range. The measured values compared to limited literature values, cross sections among photon measurements are consistent within ±10%, whereas our values of benzene, dimethyl ether and ethanol are 5-15% systematically lower in the 30 – 43 eV region but 5-20% higher in the 70 – 80 eV region than those reported by the (e, e) measurements. Our values are systematically higher than the theoretical numbers in 40-70 eV region, and gradually become lower than theirs; the theoretical values predict 10-30% higher values than those by photon measurements at 150 eV
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