摻雜鉍鐵氧化物之結構與電性質研究 = Structural and el...
吳家仲

 

  • 摻雜鉍鐵氧化物之結構與電性質研究 = Structural and electrical properties of doped BiFeO3
  • 紀錄類型: 書目-語言資料,印刷品 : 單行本
    並列題名: Structural and electrical properties of doped BiFeO3
    作者: 吳家仲,
    其他團體作者: 國立高雄大學
    出版地: [高雄市]
    出版者: 撰者;
    出版年: 2013[民102]
    面頁冊數: 84面圖,表格 : 30公分;
    標題: 鉍鐵氧化物
    標題: BiFeO3
    電子資源: http://handle.ncl.edu.tw/11296/ndltd/25146301649635004159
    附註: 參考書目:面71-73
    附註: 102年10月31日公開
    摘要註: 本研究論文主要探討摻雜La離子對BiFeO3氧化物之結構與電性質的影響。我們製備一系列的Bi1-xLaxFeO3 (0 In this study, we investigated the structural and electrical properties of La doped BiFeO3. We prepared a series of multiferroic Bi1-xLaxFeO3 (0 £ x £ 0.20) samples by solid-state reaction method to systematically study the effect of La-doping on their structural and electrical properties. The microstructures of samples were examined with a typical x-ray diffraction (XRD) system and a scanning electron microscopy (SEM). The leakage current and polarization measurements were performed using a ferroelectric test system.From the results of XRD patterns of the Bi1-xLaxFeO3 (0 £ x £ 0.20) samples, it is found that the structures transform from rhombohedral to cubic when the doping concentration x between 0.15 and 0.2. Moreover, we observed that the substitution of Bi3+-ion by La3+-ion can suppress the leakage current in Bi1-xLaxFeO3 samples powerfully. In addition, the dominant leakage mechanisms of Bi1-xLaxFeO3(0 £ x £ 0.20) samples were the Ohmic conduction and space charge limit conduction. The large leakage current mainly comes from the space charge limit conduction. We also found that the space charge limit conduction could be suppressed at low temperature for Bi1-xLaxFeO3(0 £ x £ 0.20) samples. Meanwhile, we can respectively extract reliable values of the remanent polarization for all samples by the experimental data and theoretical analysis.
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310002391368 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 423203 2632 2013 一般使用(Normal) 在架 0
310002391376 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 423203 2632 2013 c.2 一般使用(Normal) 在架 0
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