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以磁控濺鍍法成長Al/MgO/ITO薄膜元件結構之電阻切換性質研究 = ...

呂明榮

以磁控濺鍍法成長Al/MgO/ITO薄膜元件結構之電阻切換性質研究 = The study of resistive switching properties of Al/MgO/ITO thin film device structure grown using the magnetron sputtering method

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The study of resistive switching properties of Al/MgO/ITO thin film device structure grown using the magnetron sputtering method
作者:	呂明榮,
其他團體作者:	國立高雄大學
出版地:	高雄市
出版者:	國立高雄大學;
出版年:	2013[民102]
面頁冊數:	86葉圖，表格 : 30公分;
標題:	氧化鎂薄膜
標題:	MgO film
電子資源:	https://hdl.handle.net/11296/jut25b
附註:	107年11月1日公開
附註:	參考書目：葉85-86
摘要註:	本論文研製之利用射頻磁控濺鍍法沉積氧化鎂(MgO)薄膜於ITO glass基板，之後再MgO薄膜上蒸鍍鋁電極形成金屬/氧化層/金屬(MIM)結構。其對電性、物性作分析。藉由不同氣體濃度、樣品退火後的改變，探討出濺鍍參數對氧化物薄膜的電阻切換特性影響。在室溫下以不同氣體製程沉積Al / MgO / ITO glass薄膜元件，不論退火前後，皆可量測出非極性電阻切換特性。由氧離子氧化還原反應的過程形成絲狀通路來造成非極性電阻切換特性。在電阻切換特性中，室溫下氧化鎂薄膜有非初始形成過程，退火後有初始形成過程，影響電阻值穩定度和set電壓跳動範圍。 The MgO films were grown on indium tin oxide (ITO) glass substrates by rf magnetron sputtering method using a ceramic MgO target. The top electrode of aluminum (Al) was deposited on the MgO layer to form a metal/insulator/metal (MIM) structure. Through different gas concentrations and annealing conditions, we investigated the influence of deposition parameters on resistive switching characteristics of the oxide films. The Al/MgO/ITO glass device was deposited at room temperature (RT) and under various gas ambiences. Nonpolar resistive switching characteristics of the MIM device can be observed, whether it was post-annealed or not. In the process of reduction and oxidation, oxygen ions formed a highly conductive filament, resulting in the nonpolar resistive characteristics. In resistive switching, the MgO films grown at RT did not have the initial forming process, but, after post-annealing, they had the initial forming process, which will affect the stability of resistance values as well as the fluctuation range of the values of set voltages.

以磁控濺鍍法成長Al/MgO/ITO薄膜元件結構之電阻切換性質研究 = The study of resistive switching properties of Al/MgO/ITO thin film device structure grown using the magnetron sputtering method
呂, 明榮

以磁控濺鍍法成長Al/MgO/ITO薄膜元件結構之電阻切換性質研究 = The study of resistive switching properties of Al/MgO/ITO thin film device structure grown using the magnetron sputtering method / 呂明榮撰 - 高雄市 : 國立高雄大學, 2013[民102]. - 86葉 ; 圖，表格 ; 30公分.
107年11月1日公開參考書目：葉85-86.
氧化鎂薄膜MgO film

以磁控濺鍍法成長Al/MgO/ITO薄膜元件結構之電阻切換性質研究 = The study of resistive switching properties of Al/MgO/ITO thin film device structure grown using the magnetron sputtering method
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330 $a 本論文研製之利用射頻磁控濺鍍法沉積氧化鎂(MgO)薄膜於ITO glass基板，之後再MgO薄膜上蒸鍍鋁電極形成金屬/氧化層/金屬(MIM)結構。其對電性、物性作分析。藉由不同氣體濃度、樣品退火後的改變，探討出濺鍍參數對氧化物薄膜的電阻切換特性影響。在室溫下以不同氣體製程沉積Al / MgO / ITO glass薄膜元件，不論退火前後，皆可量測出非極性電阻切換特性。由氧離子氧化還原反應的過程形成絲狀通路來造成非極性電阻切換特性。在電阻切換特性中，室溫下氧化鎂薄膜有非初始形成過程，退火後有初始形成過程，影響電阻值穩定度和set電壓跳動範圍。 The MgO films were grown on indium tin oxide (ITO) glass substrates by rf magnetron sputtering method using a ceramic MgO target. The top electrode of aluminum (Al) was deposited on the MgO layer to form a metal/insulator/metal (MIM) structure. Through different gas concentrations and annealing conditions, we investigated the influence of deposition parameters on resistive switching characteristics of the oxide films. The Al/MgO/ITO glass device was deposited at room temperature (RT) and under various gas ambiences. Nonpolar resistive switching characteristics of the MIM device can be observed, whether it was post-annealed or not. In the process of reduction and oxidation, oxygen ions formed a highly conductive filament, resulting in the nonpolar resistive characteristics. In resistive switching, the MgO films grown at RT did not have the initial forming process, but, after post-annealing, they had the initial forming process, which will affect the stability of resistance values as well as the fluctuation range of the values of set voltages.
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