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利用電子束蒸鍍製作之氧化鎂薄膜的結構與電性研究 = The study ...

國立高雄大學應用物理學系碩士班

利用電子束蒸鍍製作之氧化鎂薄膜的結構與電性研究 = The study of the structures and electrical properties of MgO films fabricated by the e-beam evaporation

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The study of the structures and electrical properties of MgO films fabricated by the e-beam evaporation
作者:	陳奕霖,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2013[民102]
面頁冊數:	104面部份彩圖，表格 : 30公分;
標題:	電子束蒸鍍
標題:	e-beam evaporation
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/13302358301248045302
附註:	參考書目：面90-92
附註:	102年10月31日公開
摘要註:	本實驗利用電子束蒸鍍系統製作氧化鎂薄膜，主要分為兩大部分。第一部份在玻璃上沉積氧化鎂並觀察其結構，第二部份則利用於Si(100)基板上沈積銀作為下電極，再沉積氧化鎂，最後沉積銀的上電極於氧化鎂上，組成的結構為Ag/MgO/Ag/Si(111)、Ag/MgO/Ag/Si(100)，並且觀察微結構和電特性。在第一部份實驗中，於固定氧化鎂鍍膜速率0.2Å/sec下改變成長溫度， X光繞射圖譜顯示均沒有形成氧化鎂晶粒，猜測氧化鎂為非晶質。當氧化鎂的鍍膜速率調整至4Å/sec後，在X光繞射圖中可以觀察到MgO(111)、(200)、(220)的繞射峰，由上述結果得知氧化鎂的鍍膜速率可能改變氧化鎂沉積的狀況。在第二部份實驗中，改變氧化鎂層的薄膜厚度為100nm、200nm及300nm並且觀察樣品的電阻切換的特性，在薄膜厚度200nm和300nm中發現unipolar的電阻切換現象。分析其漏電流後發現Schottky Emission效應和Poole-Frenkel Emissio效應出現在高阻態中，低阻態則皆為歐姆傳導。在結構方面可以觀察到長條狀氧化鎂的微結構，推測可能因為下電極銀形成島嶼狀結構，導致氧化鎂沉積於銀膜時，產生奈米柱狀結構，且隨著膜厚增加更為明顯。 In this study, the microstructures and the electrical properties of MgO thin films grown by the e-beam evaporation were investigated. The thesis was divided into two parts. Firstly, MgO thin films were directly deposited on the glass substrates. In a low deposition rate, namely 0.2Å/sec, the diffraction peaks of MgO were not observed in the X-ray diffractions. Maybe the MgO films were in an amorphous state. For the case with a high deposition rate, namely 4Å/sec, the MgO films displayed a cubic halite structure.In the second part of the thesis, a tri-layer structure consisted of Ag/MgO/Ag was fabricated on the Si(111) and Si(100) substrates with different thicknesses of the MgO layer. The Ag layers were used for the top (/bottom) electrodes. The unipolar resistance switching behavior was observed in the Ag/MgO/Ag trilayers with thicknesses of the MgO equal to 200 and 300nm. By analyses of the I-V curves, the behavior of current leakage was mainly dominated by the Schottky Emission and the Poole-Frenkel Emission in the high resistance state. For the low resistance state, an ohmic behavior was observed. On the other hand, the MgO microwires were observed in the AFM images, especially for the thicknesses of the MgO films equal to 200 and 300nm. The formation of MgO microwires was assisted by the Ag bottom layer.

利用電子束蒸鍍製作之氧化鎂薄膜的結構與電性研究 = The study of the structures and electrical properties of MgO films fabricated by the e-beam evaporation
陳, 奕霖

利用電子束蒸鍍製作之氧化鎂薄膜的結構與電性研究 = The study of the structures and electrical properties of MgO films fabricated by the e-beam evaporation / 陳奕霖撰 - [高雄市] : 撰者, 2013[民102]. - 104面 ; 部份彩圖，表格 ; 30公分.
參考書目：面90-92102年10月31日公開.
電子束蒸鍍e-beam evaporation

利用電子束蒸鍍製作之氧化鎂薄膜的結構與電性研究 = The study of the structures and electrical properties of MgO films fabricated by the e-beam evaporation
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330 $a 本實驗利用電子束蒸鍍系統製作氧化鎂薄膜，主要分為兩大部分。第一部份在玻璃上沉積氧化鎂並觀察其結構，第二部份則利用於Si(100)基板上沈積銀作為下電極，再沉積氧化鎂，最後沉積銀的上電極於氧化鎂上，組成的結構為Ag/MgO/Ag/Si(111)、Ag/MgO/Ag/Si(100)，並且觀察微結構和電特性。在第一部份實驗中，於固定氧化鎂鍍膜速率0.2Å/sec下改變成長溫度， X光繞射圖譜顯示均沒有形成氧化鎂晶粒，猜測氧化鎂為非晶質。當氧化鎂的鍍膜速率調整至4Å/sec後，在X光繞射圖中可以觀察到MgO(111)、(200)、(220)的繞射峰，由上述結果得知氧化鎂的鍍膜速率可能改變氧化鎂沉積的狀況。在第二部份實驗中，改變氧化鎂層的薄膜厚度為100nm、200nm及300nm並且觀察樣品的電阻切換的特性，在薄膜厚度200nm和300nm中發現unipolar的電阻切換現象。分析其漏電流後發現Schottky Emission效應和Poole-Frenkel Emissio效應出現在高阻態中，低阻態則皆為歐姆傳導。在結構方面可以觀察到長條狀氧化鎂的微結構，推測可能因為下電極銀形成島嶼狀結構，導致氧化鎂沉積於銀膜時，產生奈米柱狀結構，且隨著膜厚增加更為明顯。 In this study, the microstructures and the electrical properties of MgO thin films grown by the e-beam evaporation were investigated. The thesis was divided into two parts. Firstly, MgO thin films were directly deposited on the glass substrates. In a low deposition rate, namely 0.2Å/sec, the diffraction peaks of MgO were not observed in the X-ray diffractions. Maybe the MgO films were in an amorphous state. For the case with a high deposition rate, namely 4Å/sec, the MgO films displayed a cubic halite structure.In the second part of the thesis, a tri-layer structure consisted of Ag/MgO/Ag was fabricated on the Si(111) and Si(100) substrates with different thicknesses of the MgO layer. The Ag layers were used for the top (/bottom) electrodes. The unipolar resistance switching behavior was observed in the Ag/MgO/Ag trilayers with thicknesses of the MgO equal to 200 and 300nm. By analyses of the I-V curves, the behavior of current leakage was mainly dominated by the Schottky Emission and the Poole-Frenkel Emission in the high resistance state. For the low resistance state, an ohmic behavior was observed. On the other hand, the MgO microwires were observed in the AFM images, especially for the thicknesses of the MgO films equal to 200 and 300nm. The formation of MgO microwires was assisted by the Ag bottom layer.
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