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Low K晶圓的雷射開槽最佳參數研究 = The study of la...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

Low K晶圓的雷射開槽最佳參數研究 = The study of laser grooving optimization parameters for Low k wafers

Record Type:	Language materials, printed : monographic
Paralel Title:	The study of laser grooving optimization parameters for Low k wafers
Author:	鄭夙棻,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	60面圖，表格 : 30公分;
Subject:	雷射開槽
Subject:	Laser grooving
Online resource:	https://hdl.handle.net/11296/3c6wf7
Notes:	108年3月25日公開
Notes:	參考書目：葉59-60
Summary:	在消費性電子產品外型要輕薄短小和封裝功能提升的要求下，晶圓尺寸的封裝的需求愈來愈重要，而目前的晶圓製程中，以銅導線配合低介電質材料為目前的趨勢, 然而低介電材料會造成了晶粒切割製程的不良率，因此，本論文主要探討雷射開槽製程的品質控制參數，本論文使用雷射3D掃描儀、電子顯微鏡、遠紅外線光學檢驗方法並配合不同的雷射開槽參數如雷射功率、雷射脈衝頻率、移動速度及失焦距離等重要因子，得到最佳的雷射開槽參數，同時本論文也提出一項雷射開槽U型率的品質參數，可以更精確的掌握雷射開槽的良率控制。 Wafer level chip scale package (WLSCP) products are trend of IC package, particularly for high speed and light weight adaptive devices which using low-resistance copper interconnecting and low-k passivation material in devices structure. However, it cause difficulty for traditional diamond sawing in which sidewall cracking might cause function fail and life time shortening. In this thesis, we optimized a laser grooving process as a solution for the WLSCP process. 3D laser depth profiler, scanning electron microscopy(SEM), and IR inspection system were used to identify the quality in laser grooving with various of laser power, repeating rate, speed, and defocus of laser operating parameters. In addition, we quantified a U shape parameter which can effectively improve the control of the grooving quality of the separated dies and device yield rate.

Low K晶圓的雷射開槽最佳參數研究 = The study of laser grooving optimization parameters for Low k wafers
鄭, 夙棻

Low K晶圓的雷射開槽最佳參數研究 = The study of laser grooving optimization parameters for Low k wafers / 鄭夙棻撰 - [高雄市] : 撰者, 2014[民103]. - 60面 ; 圖，表格 ; 30公分.
108年3月25日公開參考書目：葉59-60.
雷射開槽Laser grooving

Low K晶圓的雷射開槽最佳參數研究 = The study of laser grooving optimization parameters for Low k wafers
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300 $a 參考書目：葉59-60
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328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
330 $a 在消費性電子產品外型要輕薄短小和封裝功能提升的要求下，晶圓尺寸的封裝的需求愈來愈重要，而目前的晶圓製程中，以銅導線配合低介電質材料為目前的趨勢, 然而低介電材料會造成了晶粒切割製程的不良率，因此，本論文主要探討雷射開槽製程的品質控制參數，本論文使用雷射3D掃描儀、電子顯微鏡、遠紅外線光學檢驗方法並配合不同的雷射開槽參數如雷射功率、雷射脈衝頻率、移動速度及失焦距離等重要因子，得到最佳的雷射開槽參數，同時本論文也提出一項雷射開槽U型率的品質參數，可以更精確的掌握雷射開槽的良率控制。 Wafer level chip scale package (WLSCP) products are trend of IC package, particularly for high speed and light weight adaptive devices which using low-resistance copper interconnecting and low-k passivation material in devices structure. However, it cause difficulty for traditional diamond sawing in which sidewall cracking might cause function fail and life time shortening. In this thesis, we optimized a laser grooving process as a solution for the WLSCP process. 3D laser depth profiler, scanning electron microscopy(SEM), and IR inspection system were used to identify the quality in laser grooving with various of laser power, repeating rate, speed, and defocus of laser operating parameters. In addition, we quantified a U shape parameter which can effectively improve the control of the grooving quality of the separated dies and device yield rate.
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