橋接奈米碳管於指叉及指對指型電極間作為感測器 = Bridged Car...
國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

 

  • 橋接奈米碳管於指叉及指對指型電極間作為感測器 = Bridged Carbon Nanotubes across Interdigital and Finger-to-finger Electrodes as Sensors
  • 紀錄類型: 書目-語言資料,印刷品 : 單行本
    並列題名: Bridged Carbon Nanotubes across Interdigital and Finger-to-finger Electrodes as Sensors
    作者: 楊富翔,
    其他團體作者: 國立高雄大學
    出版地: [高雄市]
    出版者: 撰者;
    出版年: 2014[民103]
    面頁冊數: 58面部份彩圖,表 : 30公分;
    標題: 奈米碳管
    標題: carbon nsnotubes
    電子資源: http://handle.ncl.edu.tw/11296/ndltd/32594324234065322394
    附註: 參考書目:面44-47
    附註: 104年5月27日公開
    摘要註: 本篇論文以奈米碳管橋接(1)指對指(2)指叉型電極,做為作為照光、溫度和應變感測討論。在照光實驗中,因高強度的光源照射後,在光電效應下會使得載子被激發,而提高導電性。利用熱膠片、電流控制與溫度量測器測量溫度與電性變化,發現指叉型的溫度電阻係數,約1~2% ℃間。在應力實驗中,使用客製化治具使螺絲施力於懸臂樑結構上有元件的矽晶片,由阻抗分析儀及電流-電壓量測結果發現,指叉式元件的電阻變化率約40倍於指對指型,且其阻抗具有電容性或電感性的特性。推測奈米碳管本身具有導體的特性,而電子顯微鏡圖的指叉式的碳管成長,比較密集性而偏向電感性;碳管成長比較稀稀少的雙極型,使寄生電容較顯著。 This thesis used finger-to-finger (FF) and interdigital (ID) electrodes allowing carbon nanotubes across their gap used for optical, temperature and strain transducers. Both of the FF and ID devices are sensitive to high intensity illumination due to carrier excitation that enhances their conductivity. The temperature measurement used rubber heating element, current-temperature controller to approximate the temperature resistance coefficient, which is in the range of 1~2%/oC. The strain transducer used a customized tool to enforce devices a stress on the cantilever silicon substrate via a delicate screw on the other side. The finding indicates that the resistance change ratio of ID type is 40 times higher than FF type through impedance analyzer and current-voltage measurement. Additionally, both FF and ID types show their impedance can be either inductive or capacitive. Presumably, the CNT density of FF device is sparser and thus dominated by parasitic capacitance across two electrodes while the ID device is denser and dominated by parasitic inductance due to conductive CNTs.
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310002525619 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 542201 4638 2014 一般使用(Normal) 在架 0
310002525627 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 542201 4638 2014 c.2 一般使用(Normal) 在架 0
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