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磁控濺鍍法成長氧化銅與氧化亞銅薄膜之製程、物性與電阻切換特性分析 = T...

國立高雄大學應用物理學系碩士班

磁控濺鍍法成長氧化銅與氧化亞銅薄膜之製程、物性與電阻切換特性分析 = The preparation, physical and resistive switching properties of cupric oxide and cuprous oxide films deposited by using the magnetron sputtering method

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The preparation, physical and resistive switching properties of cupric oxide and cuprous oxide films deposited by using the magnetron sputtering method
作者:	李政達,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2014[民103]
面頁冊數:	101葉部分彩圖,表 : 30公分;
標題:	氧化銅
標題:	CuO
電子資源:	https://hdl.handle.net/11296/pq4qrc
附註:	108年10月31日公開
附註:	參考書目：葉86-91
摘要註:	藉由磁控濺鍍銅靶來製作氧化亞銅，氧氣的通量是其中一個很重要的關鍵。舉例來說，氧氣通量高(低)容易得到氧化銅(氧化亞銅)相，因此要製作純的氧化銅或氧化亞銅的薄膜在僅控制氧氣通量的條件下是很難得到的。本篇論文主要是透過磁控濺鍍氧化銅靶材(99.995%)並透過使用不同的工作氣體來製作氧化亞銅和氧化銅、製程溫度為250℃和500℃，而所有樣品都沉積在c軸取向的藍寶石基板和導電的矽基板上。從所有的實驗結果證明我們藉由磁控濺鍍氧化銅靶材在使用氮氣為工作氣體環境下製作出的樣品是氧化亞銅；而使用氧氣的樣品則是氧化銅。除此之外，我們也發現內部的缺陷使氧化銅與氧化亞銅都具有單極或雙極的電阻切換性質。 It is known that oxygen flux is one of the key parameters to obtain cuprous oxide films by magnetron sputtering metallic copper target. In such case, more (Less) oxygen flux would result in cupric oxide (cuprous oxide) phase preferentially and it is difficult to obtain pure cuprous oxide or cupric oxide phases by merely adjusting the oxygen flux. This work aims to prepare cuprous oxide or cupric oxide thin films by magnetron sputtering cupric oxide (99.995%) target with different working gases. All of the samples were deposited on c-plane sapphire and silicon substrates at 523 K and 723 K. According to all of our experimental results confirm the cuprous oxide and cupric oxide films that were deposited under Nitrogen and oxygen ambient gases, respectively, by sputtering a ceramic cupric oxide target. Besides, both cuprous oxide and cupric oxide films displayed unipolar or bipolar resistive switching properties, which are thought relevant to point defects.

磁控濺鍍法成長氧化銅與氧化亞銅薄膜之製程、物性與電阻切換特性分析 = The preparation, physical and resistive switching properties of cupric oxide and cuprous oxide films deposited by using the magnetron sputtering method
李, 政達

磁控濺鍍法成長氧化銅與氧化亞銅薄膜之製程、物性與電阻切換特性分析 = The preparation, physical and resistive switching properties of cupric oxide and cuprous oxide films deposited by using the magnetron sputtering method / 李政達撰 - [高雄市] : 撰者, 2014[民103]. - 101葉 ; 部分彩圖,表 ; 30公分.
108年10月31日公開參考書目：葉86-91.
氧化銅CuO

磁控濺鍍法成長氧化銅與氧化亞銅薄膜之製程、物性與電阻切換特性分析 = The preparation, physical and resistive switching properties of cupric oxide and cuprous oxide films deposited by using the magnetron sputtering method
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330 $a 藉由磁控濺鍍銅靶來製作氧化亞銅，氧氣的通量是其中一個很重要的關鍵。舉例來說，氧氣通量高(低)容易得到氧化銅(氧化亞銅)相，因此要製作純的氧化銅或氧化亞銅的薄膜在僅控制氧氣通量的條件下是很難得到的。本篇論文主要是透過磁控濺鍍氧化銅靶材(99.995%)並透過使用不同的工作氣體來製作氧化亞銅和氧化銅、製程溫度為250℃和500℃，而所有樣品都沉積在c軸取向的藍寶石基板和導電的矽基板上。從所有的實驗結果證明我們藉由磁控濺鍍氧化銅靶材在使用氮氣為工作氣體環境下製作出的樣品是氧化亞銅；而使用氧氣的樣品則是氧化銅。除此之外，我們也發現內部的缺陷使氧化銅與氧化亞銅都具有單極或雙極的電阻切換性質。 It is known that oxygen flux is one of the key parameters to obtain cuprous oxide films by magnetron sputtering metallic copper target. In such case, more (Less) oxygen flux would result in cupric oxide (cuprous oxide) phase preferentially and it is difficult to obtain pure cuprous oxide or cupric oxide phases by merely adjusting the oxygen flux. This work aims to prepare cuprous oxide or cupric oxide thin films by magnetron sputtering cupric oxide (99.995%) target with different working gases. All of the samples were deposited on c-plane sapphire and silicon substrates at 523 K and 723 K. According to all of our experimental results confirm the cuprous oxide and cupric oxide films that were deposited under Nitrogen and oxygen ambient gases, respectively, by sputtering a ceramic cupric oxide target. Besides, both cuprous oxide and cupric oxide films displayed unipolar or bipolar resistive switching properties, which are thought relevant to point defects.
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