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鈦酸鍶薄膜物性之退火效應 = Annealing effect on t...

國立高雄大學應用物理學系碩士班

鈦酸鍶薄膜物性之退火效應 = Annealing effect on the physical properties of SrTiO3 thin film

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Annealing effect on the physical properties of SrTiO3 thin film
作者:	邱致惟,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2014[民103]
面頁冊數:	85面圖，表 : 30公分;
標題:	鈦酸鍶
標題:	SrTiO3
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/56232339413308231242
附註:	參考書目：面73-75
附註:	103年12月16日公開
摘要註:	本論文研究利用射頻磁控濺鍍法成長鈦酸鍶(SrTiO3)薄膜。我們使用鈦酸鍶(SrTiO3)靶，在n 型矽基板(n-type silicon)上成長鈦酸鍶薄膜，藉由改變不同製成條件，如：不同製程氣氛(Ar 或Ar + O2)，與不同的退火溫度，來觀察晶體結構、表面形貌，化學組態與電性等物理性質的變化，希望藉此了解退火溫度對鈦酸鍶薄膜的物性影響。從X 光繞射的結果得知，所有的鈦酸鍶薄膜屬於多晶薄膜，並且透過提升退火溫度來改善薄膜結晶品質。由高解析掃描電子顯微鏡與原子力顯微鏡觀察表面形貌得知，晶粒大小與表面粗糙度隨退火溫度升高而增加。由X 光光電子能譜 O 1s 與Ti 2p3/2 得知薄膜化學組成有TiO2 與SrTiO3 氧化物。以製備完成與經退火處理的樣品，鍍上上電極金，形成Au/STO/Si 的MIS 結構元件。經由電性量測測試後，發現以Ar 成長的鈦酸鍶薄經由800℃與1000℃退火處理後的樣品，具有雙極電阻切換的特性。另外，以Ar + O2 成長的鈦酸鍶薄膜經800℃與1000℃退火的樣品具有單極與雙極電阻切換。經由電流傳導機制分析後，主要以空間電荷限制電流為主導。 In this work, we prepared SrTiO3 (STO) thin film on n-type silicon substrate by radio-frequency magnetron sputtering method using a 2 in. ceramic SrTiO3 target. The effects of differnts growth conditions, such as the different deposition ambient (Ar,Ar+O2), and post-annealing of the as-desposited STO films with different temperature, on structural, surface morphology, chemical composition and electrical were investigated by X-ray diffractio(XRD),ultrahigh resolution scanning electron microscopy (HR-SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), piezoresponse force microscope (PFM) and electrical.XRD results show that all the STO films are polycrystalline and the increase of annealing temperature led to an improvement in the crystalline quality. The HR-SEM and AFM results revealed that both the grain size and surface roughness are proportional to the annealing temperature. XPS revealed O 1s and Ti 2p3/2 peaks corresponding to TiO2 and SrTiO3.The top electrode of Au was deposited on the STO films to form a metal/insulator/semiconductor (MIS) structure devices. The STO films deposited under the Ar growth atmosphere shows bipolar resistive switching properties after annealed at 800℃ and 1000℃. Besides, the STO films deposited under the Ar + O2 growth atmosphere shows unipolar and bipolar resistive switching properties after annealed at 800℃ and 1000℃. An analysis of the I-V characteristics revealed that the electrical conduction behavior followed a trap-controlled space-charge-limited current.

鈦酸鍶薄膜物性之退火效應 = Annealing effect on the physical properties of SrTiO3 thin film
邱, 致惟

鈦酸鍶薄膜物性之退火效應 = Annealing effect on the physical properties of SrTiO3 thin film / 邱致惟撰 - [高雄市] : 撰者, 2014[民103]. - 85面 ; 圖，表 ; 30公分.
參考書目：面73-75103年12月16日公開.
鈦酸鍶SrTiO3

鈦酸鍶薄膜物性之退火效應 = Annealing effect on the physical properties of SrTiO3 thin film
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