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不同閘極製程對P型鰭式場效電晶體之電性分析及可靠度研究 = Study ...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

不同閘極製程對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Different Gate Process

Record Type:	Language materials, printed : monographic
Paralel Title:	Study on Reliability of P-Channel FinFET Devices with Different Gate Process
Author:	陳劭安,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	國立高雄大學;
Year of Publication:	2015[民104]
Description:	74葉圖，表 : 30公分;
Subject:	鰭式場效電晶體
Subject:	FinFET
Online resource:	https://hdl.handle.net/11296/6m3gv8
Notes:	109年11月18日公開
Summary:	半導體元件藉由不斷微縮來追求更好的電性與可靠度,而立體結構的鰭式場效電晶體被認為是突破傳統平面場效電晶體瓶頸的新式結構之一。在本研究中,我們發現閘極TiAl層厚度較薄的鰭式場效電晶體在電性的表現上略優於閘極TiAl層厚度較厚結構。接著我們更進一步的針對閘極TiAl層厚度較厚與閘極TiAl層厚度較薄結構進行負偏壓不穩定效應分析,發現到閘極TiAl層厚度較厚結構在NBTI的影響下,元件退化的情形較嚴重。在R-D(React-Diffusion) model下使用power law 時間幂公式得到n值可以看出閘極TiAl層厚度較厚結構與閘極TiAl層厚度較薄結構在給予不同閘極偏壓時,H的游離形式相近,且閘極TiAl層厚度較厚結構受到閘極偏壓的影響較大。對於閘極TiAl層厚度較厚結構,我們認為對通道的控制能力較差,在受到電性壓迫之後,元件特性的衰退情形較為嚴重,而閘極TiAl層厚度較薄結構可以為我們帶來更佳的元件可靠度。 In order to achieve favorable performances and reliability of device, the 3D-structure FinFET has been considered as one of the most promising options for future devices to replace planar MOSFETs. In this work, it is found that the thinner gate electrode device shows better performance than the thicker one. After NBTI stress, thicker gate electrode device shows the more serious electric degeneration. The phenomenon could be explained by R-D model. The time power law exponent shows that thicker and thinner gate electrode device release same H species away from the interface in the cases of different gate voltages. However, the thicker gate electrode device shows the serious degeneration than the thinner one, and the thinner gate electrode device performs the better reliability.

不同閘極製程對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Different Gate Process
陳, 劭安

不同閘極製程對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Different Gate Process / 陳劭安撰 - [高雄市] : 國立高雄大學, 2015[民104]. - 74葉 ; 圖，表 ; 30公分.
109年11月18日公開.
參考書目：葉71-72.
鰭式場效電晶體FinFET

不同閘極製程對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Different Gate Process
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