國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

非極性m平面氮化銦鎵/氮化鎵多重量子井之時間解析電激螢光研究與熱退火對以...

國立高雄大學應用物理學系碩士班

非極性m平面氮化銦鎵/氮化鎵多重量子井之時間解析電激螢光研究與熱退火對以脈衝有機金屬化學氣相沉積成長的氮極性氮化銦鎵/氮化鎵多重量子井之影響 = Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition
作者:	尤昱翔,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2015[民104]
面頁冊數:	51葉部分彩圖 : 30公分;
標題:	非極性m平面氮化銦鎵/氮化鎵多重量子井發光二極體
標題:	Nonpolar m-plane InGaN/GaN MQW LEDs
電子資源:	http://hdl.handle.net/11296/ndltd/35531710466709919252
附註:	106年10月31日公開
附註:	參考書目：葉39
摘要註:	首先，我們呈現極性c平面與非極性m平面氮化銦家/氮化鎵多重量子井樣品與元件的掃描電子顯微鏡(SEM)、陰極發光(CL)、原子力顯微鏡(AFM)、光激螢光(PL)、電激螢光(EL)、電流-電壓(I-V)、以及時間解析電激螢光(TREL)的實驗結果。非極性m平面樣品相較於極性c平面樣品有較大的表面粗超度與較弱的CL強度，所以非極性m平面樣品有較高的缺陷密度與較低的晶體品質。陰極發光強度與原子力顯微鏡量測到的結果一致，極性c平面氮化鎵樣品有較高的陰極發光強度與較好的晶體品質。光激螢光的實驗結果顯示，非極性m平面樣品有較大的偏極化率，當溫度從20K升到300K，非極性m平面樣品的發光波長位置有藍移現象,而極性c平面樣品的發光波長位置有紅移現象。時間解析電激螢光的實驗結果顯示，非極性m平面元件比極性c平面元件有較短反應時間，這表示非極性m平面元件具有較好的載子注入效率。由於較大量子侷限史塔克效應(QCSE)的影響，極性c平面元件有較長的載子複合時間。第二部份，我們呈現氮極性氮化銦家/氮化鎵量子井樣品的電子顯微鏡(SEM)、陰極發光(CL)、原子力顯微鏡(AFM)、X光繞射分析(XRD)、光激螢光(PL)的實驗結果與退火的影響。氮極性t11@t22樣品比t11@t25樣品有較大的表面粗糙度,所以通氮成長時間越短樣品有較大的表面粗糙度。氮極性t11@t22樣品在單位面積裡有較多的氮化銦鎵晶粒。氮極性t11@t22樣品氮化銦鎵的銦成分較t11@t25樣品多。當溫度從20K升到300K，氮極性t11@t25樣品的PL積分強度衰減較快。退火後，兩個樣品表面都變得較為平坦,而CL頻譜的紫外光與可見光波長相對強度發生改變。根據X光繞射分析,氮化銦鎵訊號強度增強。退火後，樣品表面晶粒與發光密度都增加。 First, we have shown the experimental results of scanning electron microscope (SEM), cathodoluminescence (CL), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL), electroluminescence (EL), current-voltage (I-V), and time-resolved electroluminescence (TREL) measurements of the polar c-plane and nonpolar m-plane InGaN/GaN MQW samples and LEDs. The larger surface roughness and weaker CL intensity of the nonpolar m-plane InGaN/GaN MQW sample than those of the polar c-plane one show a higher defect density and lower sample quality of the nonpolar m-plane one. The result of CL measurement is consistent of that of the AFM measurement. In addition, the DoP of PL of the nonpolar m-plane InGaN/GaN MQW sample is larger than the polar c-plane one. With increasing temperature from 20 to 300 K, PL position of the polar c-plane InGaN/GaN MQW sample is slightly blue-shifted, while that of the nonpolar m-plane one is red-shifted. The shorter response time of the nonpolar m-plane InGaN/GaN MQW LED than that of the polar c-plane one suggest a better injection efficiency. The longer recombination time of the polar c-plane InGaN/GaN MQW LED than that of the nonpolar m-plane one could be due to the larger QCSE and potential distribution in the MQWs. Second, we have shown the experimental results of SEM, CL, XRD, AFM, PL measurements and annealing affect of the N-Polar InGaN/GaN MQW samples. The surface roughness of the N-polar t11@t22 sample is larger than that of the N-polar t11@t25 one. The N-polar InGaN/GaN MQW and t11@t22 InGaN/GaN MQW samples show a larger area ratio of InGaN mounds. The indium content of the N-polar t11@t22 InGaN/GaN MQW sample is larger than those of the N-polar t11@t25 one. With increasing temperature from 20 to 300 K, the integral PL intensity of the N-polar InGaN/GaN MQW sample decays faster than those of the N-polar one. The surface roughness of the two annealed samples becomes smoother. With thermal annealing, the relative intensities of UV and visible peaks in the CL spectra are changed and the InGaN intensity increases in XRD measurement. The mound and light densities of the annealed N-polar samples are larger than those of the as-grown ones.

非極性m平面氮化銦鎵/氮化鎵多重量子井之時間解析電激螢光研究與熱退火對以脈衝有機金屬化學氣相沉積成長的氮極性氮化銦鎵/氮化鎵多重量子井之影響 = Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition
尤, 昱翔

非極性m平面氮化銦鎵/氮化鎵多重量子井之時間解析電激螢光研究與熱退火對以脈衝有機金屬化學氣相沉積成長的氮極性氮化銦鎵/氮化鎵多重量子井之影響 = Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition / 尤昱翔撰 - [高雄市] : 撰者, 2015[民104]. - 51葉 ; 部分彩圖 ; 30公分.
106年10月31日公開參考書目：葉39.
非極性m平面氮化銦鎵/氮化鎵多重量子井發光二極體Nonpolar m-plane InGaN/GaN MQW LEDs

非極性m平面氮化銦鎵/氮化鎵多重量子井之時間解析電激螢光研究與熱退火對以脈衝有機金屬化學氣相沉積成長的氮極性氮化銦鎵/氮化鎵多重量子井之影響 = Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition
LDR:05899nam0a2200277 450 001 458469
005 20171103092823.0
010 0 $b 精裝
010 0 $b 平裝
100 $a 20151007d2015 k y0chiy50 b
101 0 $a eng $d chi $d eng
102 $a tw
105 $a a am 000yy
200 1 $a 非極性m平面氮化銦鎵/氮化鎵多重量子井之時間解析電激螢光研究與熱退火對以脈衝有機金屬化學氣相沉積成長的氮極性氮化銦鎵/氮化鎵多重量子井之影響 $d Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition $z eng $f 尤昱翔撰
210 $a [高雄市] $c 撰者 $d 2015[民104]
215 0 $a 51葉 $c 部分彩圖 $d 30公分
300 $a 106年10月31日公開
300 $a 參考書目：葉39
314 $a 指導教授：馮世維博士
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 首先，我們呈現極性c平面與非極性m平面氮化銦家/氮化鎵多重量子井樣品與元件的掃描電子顯微鏡(SEM)、陰極發光(CL)、原子力顯微鏡(AFM)、光激螢光(PL)、電激螢光(EL)、電流-電壓(I-V)、以及時間解析電激螢光(TREL)的實驗結果。非極性m平面樣品相較於極性c平面樣品有較大的表面粗超度與較弱的CL強度，所以非極性m平面樣品有較高的缺陷密度與較低的晶體品質。陰極發光強度與原子力顯微鏡量測到的結果一致，極性c平面氮化鎵樣品有較高的陰極發光強度與較好的晶體品質。光激螢光的實驗結果顯示，非極性m平面樣品有較大的偏極化率，當溫度從20K升到300K，非極性m平面樣品的發光波長位置有藍移現象,而極性c平面樣品的發光波長位置有紅移現象。時間解析電激螢光的實驗結果顯示，非極性m平面元件比極性c平面元件有較短反應時間，這表示非極性m平面元件具有較好的載子注入效率。由於較大量子侷限史塔克效應(QCSE)的影響，極性c平面元件有較長的載子複合時間。第二部份，我們呈現氮極性氮化銦家/氮化鎵量子井樣品的電子顯微鏡(SEM)、陰極發光(CL)、原子力顯微鏡(AFM)、X光繞射分析(XRD)、光激螢光(PL)的實驗結果與退火的影響。氮極性t11@t22樣品比t11@t25樣品有較大的表面粗糙度,所以通氮成長時間越短樣品有較大的表面粗糙度。氮極性t11@t22樣品在單位面積裡有較多的氮化銦鎵晶粒。氮極性t11@t22樣品氮化銦鎵的銦成分較t11@t25樣品多。當溫度從20K升到300K，氮極性t11@t25樣品的PL積分強度衰減較快。退火後，兩個樣品表面都變得較為平坦,而CL頻譜的紫外光與可見光波長相對強度發生改變。根據X光繞射分析,氮化銦鎵訊號強度增強。退火後，樣品表面晶粒與發光密度都增加。 First, we have shown the experimental results of scanning electron microscope (SEM), cathodoluminescence (CL), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL), electroluminescence (EL), current-voltage (I-V), and time-resolved electroluminescence (TREL) measurements of the polar c-plane and nonpolar m-plane InGaN/GaN MQW samples and LEDs. The larger surface roughness and weaker CL intensity of the nonpolar m-plane InGaN/GaN MQW sample than those of the polar c-plane one show a higher defect density and lower sample quality of the nonpolar m-plane one. The result of CL measurement is consistent of that of the AFM measurement. In addition, the DoP of PL of the nonpolar m-plane InGaN/GaN MQW sample is larger than the polar c-plane one. With increasing temperature from 20 to 300 K, PL position of the polar c-plane InGaN/GaN MQW sample is slightly blue-shifted, while that of the nonpolar m-plane one is red-shifted. The shorter response time of the nonpolar m-plane InGaN/GaN MQW LED than that of the polar c-plane one suggest a better injection efficiency. The longer recombination time of the polar c-plane InGaN/GaN MQW LED than that of the nonpolar m-plane one could be due to the larger QCSE and potential distribution in the MQWs. Second, we have shown the experimental results of SEM, CL, XRD, AFM, PL measurements and annealing affect of the N-Polar InGaN/GaN MQW samples. The surface roughness of the N-polar t11@t22 sample is larger than that of the N-polar t11@t25 one. The N-polar InGaN/GaN MQW and t11@t22 InGaN/GaN MQW samples show a larger area ratio of InGaN mounds. The indium content of the N-polar t11@t22 InGaN/GaN MQW sample is larger than those of the N-polar t11@t25 one. With increasing temperature from 20 to 300 K, the integral PL intensity of the N-polar InGaN/GaN MQW sample decays faster than those of the N-polar one. The surface roughness of the two annealed samples becomes smoother. With thermal annealing, the relative intensities of UV and visible peaks in the CL spectra are changed and the InGaN intensity increases in XRD measurement. The mound and light densities of the annealed N-polar samples are larger than those of the as-grown ones.
510 1 $a Time-resolved Electroluminescence Studies of Nonpolar m-plane InGaN/GaN Multiple Quantum Wells (MQWs) and Annealing effect on Nitrogen-Polar InGaN/GaN MQWs grown by Pulsed Metalorganic Chemical Vapor Deposition. $z eng
610 # 0 $a 非極性m平面氮化銦鎵/氮化鎵多重量子井發光二極體 $a 載子傳輸 $a 反應時間 $a 氮極性氮化銦鎵/氮化鎵多重量子井 $a 快速熱退火
610 # 1 $a Nonpolar m-plane InGaN/GaN MQW LEDs $a Carrier Transport $a Response Time $a N-Polar InGaN/GaN MQWs $a Rapid Thermal Annealing
681 $a 008M/0019 $b 423203 4368 $v 2007年版
700 1 $a 尤 $b 昱翔 $4 撰 $3 709707
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b NUK $c 20171026 $g CCR
856 7 # $u http://hdl.handle.net/11296/ndltd/35531710466709919252 $2 http $z 電子資源