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Piezoelectric accelerometers with in...

Levinzon, Felix.

Piezoelectric accelerometers with integral electronics

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Piezoelectric accelerometers with integral electronicsby Felix Levinzon.
作者:	Levinzon, Felix.
出版者:	Cham :Springer International Publishing :2015.
面頁冊數:	xv, 169 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Accelerometers.
電子資源:	http://dx.doi.org/10.1007/978-3-319-08078-9
ISBN:	9783319080789 (electronic bk.)

Piezoelectric accelerometers with integral electronics
Levinzon, Felix.

Piezoelectric accelerometers with integral electronics[electronic resource] /by Felix Levinzon. - Cham :Springer International Publishing :2015. - xv, 169 p. :ill., digital ;24 cm.

Introduction to Piezoelectric Accelerometers with Integral Electronics -- Piezoelectric Transducers Used for Piezoelectric Accelerometers with Integral Electronics -- Integral FET Amplifiers Used for IEPE Accelerometers -- Noise of a FET Amplifier -- Comparison of 1/f Noise and Thermal Noise in JFETs and MOSFETs -- Fundamental Noise Limit of an IEPE Accelerometer -- Noise of and IEPE Accelerometer -- Ultra-low-noise IEPE Seismic Accelerometers -- High-temperature, up to 175 C, Miniature IEPE Accelerometers.

This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE) It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/Hz) The discussion also includes ultra-low-noise (at level of 3 ng/Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; Describes recently design of ultra-low-noise (at level of 3 ng/Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers; Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/Hz) JFET; Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.

ISBN: 9783319080789 (electronic bk.)

Standard No.: 10.1007/978-3-319-08078-9doiSubjects--Topical Terms:

710477
Accelerometers.

LC Class. No.: TL589.2.A3

Dewey Class. No.: 681.2

Piezoelectric accelerometers with integral electronics
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245 1 0 $a Piezoelectric accelerometers with integral electronics $h [electronic resource] / $c by Felix Levinzon.
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505 0 $a Introduction to Piezoelectric Accelerometers with Integral Electronics -- Piezoelectric Transducers Used for Piezoelectric Accelerometers with Integral Electronics -- Integral FET Amplifiers Used for IEPE Accelerometers -- Noise of a FET Amplifier -- Comparison of 1/f Noise and Thermal Noise in JFETs and MOSFETs -- Fundamental Noise Limit of an IEPE Accelerometer -- Noise of and IEPE Accelerometer -- Ultra-low-noise IEPE Seismic Accelerometers -- High-temperature, up to 175 C, Miniature IEPE Accelerometers.
520 $a This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE) It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/Hz) The discussion also includes ultra-low-noise (at level of 3 ng/Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design. Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors; Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits; Describes recently design of ultra-low-noise (at level of 3 ng/Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers; Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/Hz) JFET; Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.
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