語系:
繁體中文
English
說明(常見問題)
圖資館首頁
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Tunneling field effect transistor te...
~
Chan, Mansun.
Tunneling field effect transistor technology
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Tunneling field effect transistor technologyedited by Lining Zhang, Mansun Chan.
其他作者:
Zhang, Lining.
出版者:
Cham :Springer International Publishing :2016.
面頁冊數:
ix, 213 p. :ill. (some col.), digital ;24 cm.
Contained By:
Springer eBooks
標題:
Field-effect transistors.
電子資源:
http://dx.doi.org/10.1007/978-3-319-31653-6
ISBN:
9783319316536$q(electronic bk.)
Tunneling field effect transistor technology
Tunneling field effect transistor technology
[electronic resource] /edited by Lining Zhang, Mansun Chan. - Cham :Springer International Publishing :2016. - ix, 213 p. :ill. (some col.), digital ;24 cm.
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
ISBN: 9783319316536$q(electronic bk.)
Standard No.: 10.1007/978-3-319-31653-6doiSubjects--Topical Terms:
200533
Field-effect transistors.
LC Class. No.: TK7871.95
Dewey Class. No.: 621.3815284
Tunneling field effect transistor technology
LDR
:01513nmm a2200301 a 4500
001
486688
003
DE-He213
005
20161013094226.0
006
m d
007
cr nn 008maaau
008
161116s2016 gw s 0 eng d
020
$a
9783319316536$q(electronic bk.)
020
$a
9783319316512$q(paper)
024
7
$a
10.1007/978-3-319-31653-6
$2
doi
035
$a
978-3-319-31653-6
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
TK7871.95
072
7
$a
TJFC
$2
bicssc
072
7
$a
TEC008010
$2
bisacsh
082
0 4
$a
621.3815284
$2
23
090
$a
TK7871.95
$b
.T926 2016
245
0 0
$a
Tunneling field effect transistor technology
$h
[electronic resource] /
$c
edited by Lining Zhang, Mansun Chan.
260
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2016.
300
$a
ix, 213 p. :
$b
ill. (some col.), digital ;
$c
24 cm.
520
$a
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
650
0
$a
Field-effect transistors.
$3
200533
650
1 4
$a
Engineering.
$3
210888
650
2 4
$a
Circuits and Systems.
$3
274416
650
2 4
$a
Electronic Circuits and Devices.
$3
495609
650
2 4
$a
Electronics and Microelectronics, Instrumentation.
$3
274412
700
1
$a
Zhang, Lining.
$3
744769
700
1
$a
Chan, Mansun.
$3
744770
710
2
$a
SpringerLink (Online service)
$3
273601
773
0
$t
Springer eBooks
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-31653-6
950
$a
Engineering (Springer-11647)
筆 0 讀者評論
全部
電子館藏
館藏
1 筆 • 頁數 1 •
1
條碼號
館藏地
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
000000125235
電子館藏
1圖書
電子書
EB TK7871.95 T926 2016
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
多媒體檔案
http://dx.doi.org/10.1007/978-3-319-31653-6
評論
新增評論
分享你的心得
Export
取書館別
處理中
...
變更密碼
登入