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3D flash memories

Micheloni, Rino.

3D flash memories

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	3D flash memoriesedited by Rino Micheloni.
其他作者:	Micheloni, Rino.
出版者:	Dordrecht :Springer Netherlands :2016.
面頁冊數:	xxii, 380 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
標題:	Computer storage devices.
電子資源:	http://dx.doi.org/10.1007/978-94-017-7512-0
ISBN:	9789401775120$q(electronic bk.)

3D flash memories
3D flash memories[electronic resource] /edited by Rino Micheloni. - Dordrecht :Springer Netherlands :2016. - xxii, 380 p. :ill. (some col.), digital ;24 cm.

Dedication Page -- Foreword -- Preface -- Introduction -- About the Editor -- Acknowledgements -- 1 The Business of NAND -- 2 Reliability of 3D NAND Flash memories -- 3 3D Stacked NAND Flash memories -- 4 3D Charge Trap NAND Flash memories -- 5 3D Floating Gate NAND Flash memories -- 6 Advanced Architectures for 3D NAND Flash memories with vertical channel -- 7 3D VG-Type NAND Flash memories -- 8 RRAM Cross-point arrays -- 9 3D Multi-Chip Integration and Packaging Technology -- 10 BCH and LDPC Error Correction Codes for NAND Flash memories -- 11 Advanced algebraic and graph-based ECC schemes for modern NVMs -- 12 System-Level Considerations on Design of 3D NAND Flash memories -- Index.

This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird's-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

ISBN: 9789401775120$q(electronic bk.)

Standard No.: 10.1007/978-94-017-7512-0doiSubjects--Topical Terms:

202780
Computer storage devices.

LC Class. No.: TK7895.M4

Dewey Class. No.: 004.5

3D flash memories
LDR:03695nmm a2200325 a 4500 001 489119
003 DE-He213
005 20161024144554.0
006 m d
007 cr nn 008maaau
008 161213s2016 ne s 0 eng d
020 $a 9789401775120$q(electronic bk.)
020 $a 9789401775106$q(paper)
024 7 $a 10.1007/978-94-017-7512-0 $2 doi
035 $a 978-94-017-7512-0
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7895.M4
072 7 $a UKS $2 bicssc
072 7 $a UYF $2 bicssc
072 7 $a COM067000 $2 bisacsh
082 0 4 $a 004.5 $2 23
090 $a TK7895.M4 $b T531 2016
245 0 0 $a 3D flash memories $h [electronic resource] / $c edited by Rino Micheloni.
260 $a Dordrecht : $b Springer Netherlands : $b Imprint: Springer, $c 2016.
300 $a xxii, 380 p. : $b ill. (some col.), digital ; $c 24 cm.
505 0 $a Dedication Page -- Foreword -- Preface -- Introduction -- About the Editor -- Acknowledgements -- 1 The Business of NAND -- 2 Reliability of 3D NAND Flash memories -- 3 3D Stacked NAND Flash memories -- 4 3D Charge Trap NAND Flash memories -- 5 3D Floating Gate NAND Flash memories -- 6 Advanced Architectures for 3D NAND Flash memories with vertical channel -- 7 3D VG-Type NAND Flash memories -- 8 RRAM Cross-point arrays -- 9 3D Multi-Chip Integration and Packaging Technology -- 10 BCH and LDPC Error Correction Codes for NAND Flash memories -- 11 Advanced algebraic and graph-based ECC schemes for modern NVMs -- 12 System-Level Considerations on Design of 3D NAND Flash memories -- Index.
520 $a This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird's-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
650 0 $a Computer storage devices. $3 202780
650 1 4 $a Computer Science. $3 212513
650 2 4 $a Memory Structures. $3 274440
650 2 4 $a Electronic Circuits and Devices. $3 495609
650 2 4 $a Circuits and Systems. $3 274416
700 1 $a Micheloni, Rino. $3 256242
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-94-017-7512-0
950 $a Computer Science (Springer-11645)