國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Advanced physics of electron transpo...

Fischetti, Massimo V.

Advanced physics of electron transport in semiconductors and nanostructures

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Advanced physics of electron transport in semiconductors and nanostructuresby Massimo V. Fischetti, William G. Vandenberghe.
作者:	Fischetti, Massimo V.
其他作者:	Vandenberghe, William G.
出版者:	Cham :Springer International Publishing :2016.
面頁冊數:	xxiii, 474 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
標題:	Electron transport.
電子資源:	http://dx.doi.org/10.1007/978-3-319-01101-1
ISBN:	9783319011011$q(electronic bk.)

Advanced physics of electron transport in semiconductors and nanostructures
Fischetti, Massimo V.

Advanced physics of electron transport in semiconductors and nanostructures[electronic resource] /by Massimo V. Fischetti, William G. Vandenberghe. - Cham :Springer International Publishing :2016. - xxiii, 474 p. :ill. (some col.), digital ;24 cm. - Graduate texts in physics,1868-4513. - Graduate texts in physics..

Part I A Brief Review of Classical and Quantum Mechanics -- Part II Crystals and Electronic Properties of Solids -- Part III Second Quantization and Elementary Excitations in Solids -- Part IV Electron Scattering in Solids -- Part V Electronic Transport.

This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale. Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry. Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE) An advanced chapter, Chapter 18, is strictly related to the 'tricky' transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green's functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

ISBN: 9783319011011$q(electronic bk.)

Standard No.: 10.1007/978-3-319-01101-1doiSubjects--Topical Terms:

219649
Electron transport.

LC Class. No.: QC611.6.E45

Dewey Class. No.: 530.138

Advanced physics of electron transport in semiconductors and nanostructures
LDR:03576nmm a2200325 a 4500 001 489508
003 DE-He213
005 20161103120249.0
006 m d
007 cr nn 008maaau
008 161213s2016 gw s 0 eng d
020 $a 9783319011011$q(electronic bk.)
020 $a 9783319011004$q(paper)
024 7 $a 10.1007/978-3-319-01101-1 $2 doi
035 $a 978-3-319-01101-1
040 $a GP $c GP
041 0 $a eng
050 4 $a QC611.6.E45
072 7 $a TJFD5 $2 bicssc
072 7 $a TEC008090 $2 bisacsh
082 0 4 $a 530.138 $2 23
090 $a QC611.6.E45 $b F529 2016
100 1 $a Fischetti, Massimo V. $3 748062
245 1 0 $a Advanced physics of electron transport in semiconductors and nanostructures $h [electronic resource] / $c by Massimo V. Fischetti, William G. Vandenberghe.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a xxiii, 474 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Graduate texts in physics, $x 1868-4513
505 0 $a Part I A Brief Review of Classical and Quantum Mechanics -- Part II Crystals and Electronic Properties of Solids -- Part III Second Quantization and Elementary Excitations in Solids -- Part IV Electron Scattering in Solids -- Part V Electronic Transport.
520 $a This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale. Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry. Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE) An advanced chapter, Chapter 18, is strictly related to the 'tricky' transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green's functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
650 0 $a Electron transport. $3 219649
650 0 $a Semiconductors. $3 182134
650 0 $a Nanostructured materials. $3 216041
650 1 4 $a Physics. $3 179414
650 2 4 $a Optical and Electronic Materials. $3 274099
650 2 4 $a Electrical Engineering. $3 338706
650 2 4 $a Nanotechnology. $3 193873
650 2 4 $a Physical Chemistry. $3 273698
650 2 4 $a Nanoscale Science and Technology. $3 489389
700 1 $a Vandenberghe, William G. $3 748063
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
830 0 $a Graduate texts in physics. $3 513710
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-01101-1
950 $a Physics and Astronomy (Springer-11651)