國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Measurement and Modeling of the Loca...

Howell, Sarah L.

Measurement and Modeling of the Local Photoresponse in Nanostructured Semiconductor Devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Measurement and Modeling of the Local Photoresponse in Nanostructured Semiconductor Devices.
作者:	Howell, Sarah L.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, 2016
面頁冊數:	204 p.
附註:	Source: Dissertation Abstracts International, Volume: 78-02(E), Section: B.
附註:	Adviser: Lincoln Lauhon.
Contained By:	Dissertation Abstracts International78-02B(E).
標題:	Nanoscience.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10160677
ISBN:	9781369155846

Measurement and Modeling of the Local Photoresponse in Nanostructured Semiconductor Devices.
Howell, Sarah L.

Measurement and Modeling of the Local Photoresponse in Nanostructured Semiconductor Devices. - Ann Arbor : ProQuest Dissertations & Theses, 2016 - 204 p.

Source: Dissertation Abstracts International, Volume: 78-02(E), Section: B.

Thesis (Ph.D.)--Northwestern University, 2016.

This thesis describes the experimental characterization and modeling of nanostructured semiconductor devices including one-dimensional nanowire heterostructures and van der Waals heterostructures incorporating two-dimensional materials. Logic and optoelectronic devices made from low-dimensional and van der Waals materials have properties that are distinct from and/or superior to that of heterojunctions made from conventional materials. One of the primary goals of this thesis is to understand how intrinsic materials properties and the device geometry combined to determine the electrical characteristics and photoresponse of heterojunction devices. Spatially resolved measurements of photocurrent and photovoltage are compared with electromagnetic and charge transport modeling to identify the origin and limitations of the performance of devices as solar cells and photodetectors. Mechanistic understanding is provided for how the sub-wavelength geometry and spatial variations in the composition of GaN/InGaN core-shell nanowire arrays leads to spatial variations in carrier generation and collection that impact the external quantum efficiency of the solar cell. Origins of photocurrent are identified in devices with geometry-induced heterojunctions arising from abrupt discontinuities in physical thickness due to the thickness-dependent band structure of MoS2. The gate tunable rectification and photovoltage of hybrid organic-inorganic pentacene-MoS2 heterojunction devices was also investigated with a combination scanning photocurrent microscopy and finite element modeling. The intrinsic materials parameters that control the anti-ambipolar transport characteristic are identified through the modeling, and the impact of the lateral geometry of device components photovoltage and transfer curves is determined. The geometry and recombination properties that govern the origin and time dependence of the photoresponse of a vertical Gr/CNT/MoS2/Ti/Au device were identified. Characterization of photoresponse with local scanning probes combined with modeling advance fundamental understanding of mechanisms dominating charge transport and photoresponse in nanostructured semiconductor devices and of how the device geometry, band alignments, and other material properties influence the optoelectronic performance. The application of this knowledge can inform the design of next-generation devices.

ISBN: 9781369155846Subjects--Topical Terms:

220425
Nanoscience.

Measurement and Modeling of the Local Photoresponse in Nanostructured Semiconductor Devices.
LDR:03357nmm a2200301 4500 001 502145
005 20170619070731.5
008 170818s2016 ||||||||||||||||| ||eng d
020 $a 9781369155846
035 $a (MiAaPQ)AAI10160677
035 $a AAI10160677
040 $a MiAaPQ $c MiAaPQ
100 1 $a Howell, Sarah L. $3 766189
245 1 0 $a Measurement and Modeling of the Local Photoresponse in Nanostructured Semiconductor Devices.
260 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2016
300 $a 204 p.
500 $a Source: Dissertation Abstracts International, Volume: 78-02(E), Section: B.
500 $a Adviser: Lincoln Lauhon.
502 $a Thesis (Ph.D.)--Northwestern University, 2016.
520 $a This thesis describes the experimental characterization and modeling of nanostructured semiconductor devices including one-dimensional nanowire heterostructures and van der Waals heterostructures incorporating two-dimensional materials. Logic and optoelectronic devices made from low-dimensional and van der Waals materials have properties that are distinct from and/or superior to that of heterojunctions made from conventional materials. One of the primary goals of this thesis is to understand how intrinsic materials properties and the device geometry combined to determine the electrical characteristics and photoresponse of heterojunction devices. Spatially resolved measurements of photocurrent and photovoltage are compared with electromagnetic and charge transport modeling to identify the origin and limitations of the performance of devices as solar cells and photodetectors. Mechanistic understanding is provided for how the sub-wavelength geometry and spatial variations in the composition of GaN/InGaN core-shell nanowire arrays leads to spatial variations in carrier generation and collection that impact the external quantum efficiency of the solar cell. Origins of photocurrent are identified in devices with geometry-induced heterojunctions arising from abrupt discontinuities in physical thickness due to the thickness-dependent band structure of MoS2. The gate tunable rectification and photovoltage of hybrid organic-inorganic pentacene-MoS2 heterojunction devices was also investigated with a combination scanning photocurrent microscopy and finite element modeling. The intrinsic materials parameters that control the anti-ambipolar transport characteristic are identified through the modeling, and the impact of the lateral geometry of device components photovoltage and transfer curves is determined. The geometry and recombination properties that govern the origin and time dependence of the photoresponse of a vertical Gr/CNT/MoS2/Ti/Au device were identified. Characterization of photoresponse with local scanning probes combined with modeling advance fundamental understanding of mechanisms dominating charge transport and photoresponse in nanostructured semiconductor devices and of how the device geometry, band alignments, and other material properties influence the optoelectronic performance. The application of this knowledge can inform the design of next-generation devices.
590 $a School code: 0163.
650 4 $a Nanoscience. $3 220425
650 4 $a Materials science. $3 221779
650 4 $a Physics. $3 179414
690 $a 0565
690 $a 0794
690 $a 0605
710 2 $a Northwestern University. $b Materials Science and Engineering. $3 603136
773 0 $t Dissertation Abstracts International $g 78-02B(E).
790 $a 0163
791 $a Ph.D.
792 $a 2016
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10160677