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Power GaN devicesmaterials, applicat...

Meneghesso, Gaudenzio.

Power GaN devicesmaterials, applications and reliability /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Power GaN devicesedited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni.
其他題名:	materials, applications and reliability /
其他作者:	Meneghini, Matteo.
出版者:	Cham :Springer International Publishing :2017.
面頁冊數:	x, 380 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	SemiconductorsMaterials.
電子資源:	http://dx.doi.org/10.1007/978-3-319-43199-4
ISBN:	9783319431994$q(electronic bk.)

Power GaN devicesmaterials, applications and reliability /
Power GaN devicesmaterials, applications and reliability /[electronic resource] :edited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. - Cham :Springer International Publishing :2017. - x, 380 p. :ill., digital ;24 cm. - Power electronics and power systems,2196-3185. - Power electronics and power systems..

1 Properties and advantages of gallium nitride; Daisuke Ueda -- 2 Substrate issues and epitaxial growth; Stacia Keller -- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon -- 4 Lateral GaN-based power devices; Umesh Mishra -- 5 GaN-based vertical transistors; Srabanti Chowduri -- 6 GaN-based nanowire transistors; Tomas Palacios -- 7 Deep level characterization: electrical and optical methods; Robert Kaplar -- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi -- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni -- 10 Cascode configuration for normally-off devices; Primit Parikh -- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda -- 12 Fluorine implanted E-mode transistors; Kevin Chen -- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl -- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee -- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

ISBN: 9783319431994$q(electronic bk.)

Standard No.: 10.1007/978-3-319-43199-4doiSubjects--Topical Terms:

197826
Semiconductors
--Materials.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.38152

Power GaN devicesmaterials, applications and reliability /
LDR:04100nmm a2200337 a 4500 001 504931
003 DE-He213
005 20160908074220.0
006 m d
007 cr nn 008maaau
008 171030s2017 gw s 0 eng d
020 $a 9783319431994$q(electronic bk.)
020 $a 9783319431970$q(paper)
024 7 $a 10.1007/978-3-319-43199-4 $2 doi
035 $a 978-3-319-43199-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.85
072 7 $a THRD $2 bicssc
072 7 $a THRM $2 bicssc
072 7 $a TEC046000 $2 bisacsh
082 0 4 $a 621.38152 $2 23
090 $a TK7871.85 $b .P887 2017
245 0 0 $a Power GaN devices $h [electronic resource] : $b materials, applications and reliability / $c edited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2017.
300 $a x, 380 p. : $b ill., digital ; $c 24 cm.
490 1 $a Power electronics and power systems, $x 2196-3185
505 0 $a 1 Properties and advantages of gallium nitride; Daisuke Ueda -- 2 Substrate issues and epitaxial growth; Stacia Keller -- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon -- 4 Lateral GaN-based power devices; Umesh Mishra -- 5 GaN-based vertical transistors; Srabanti Chowduri -- 6 GaN-based nanowire transistors; Tomas Palacios -- 7 Deep level characterization: electrical and optical methods; Robert Kaplar -- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi -- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni -- 10 Cascode configuration for normally-off devices; Primit Parikh -- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda -- 12 Fluorine implanted E-mode transistors; Kevin Chen -- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl -- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee -- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
520 $a This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
650 0 $a Semiconductors $x Materials. $3 197826
650 0 $a Gallium nitride. $3 210966
650 1 4 $a Engineering. $3 210888
650 2 4 $a Power Electronics, Electrical Machines and Networks. $3 338660
650 2 4 $a Semiconductors. $3 182134
650 2 4 $a Optical and Electronic Materials. $3 274099
650 2 4 $a Energy Systems. $3 512090
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
700 1 $a Meneghini, Matteo. $3 769997
700 1 $a Meneghesso, Gaudenzio. $3 769998
700 1 $a Zanoni, Enrico. $3 769999
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
830 0 $a Power electronics and power systems. $3 683055
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-43199-4
950 $a Engineering (Springer-11647)