Effect of Ion Flux (Dose Rate) in So...
Shen, Ming-Yi.

 

  • Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms.
  • 紀錄類型: 書目-電子資源 : Monograph/item
    正題名/作者: Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms.
    作者: Shen, Ming-Yi.
    出版者: Ann Arbor : ProQuest Dissertations & Theses, 2017
    面頁冊數: 137 p.
    附註: Source: Dissertation Abstracts International, Volume: 79-03(E), Section: B.
    附註: Adviser: Christopher Borst.
    Contained By: Dissertation Abstracts International79-03B(E).
    標題: Nanotechnology.
    電子資源: http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10683292
    ISBN: 9780355509878
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