國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

3D TCAD simulation for CMOS nanoelet...

Jhan, Yi-Ruei.

3D TCAD simulation for CMOS nanoeletronic devices

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	3D TCAD simulation for CMOS nanoeletronic devicesby Yung-Chun Wu, Yi-Ruei Jhan.
作者:	Wu, Yung-Chun.
其他作者:	Jhan, Yi-Ruei.
出版者:	Singapore :Springer Singapore :2018.
面頁冊數:	xiii, 330 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
標題:	Metal oxide semiconductors, ComplementaryComputer-aided design.
電子資源:	http://dx.doi.org/10.1007/978-981-10-3066-6
ISBN:	9789811030666$q(electronic bk.)

3D TCAD simulation for CMOS nanoeletronic devices
Wu, Yung-Chun.

3D TCAD simulation for CMOS nanoeletronic devices[electronic resource] /by Yung-Chun Wu, Yi-Ruei Jhan. - Singapore :Springer Singapore :2018. - xiii, 330 p. :ill. (some col.), digital ;24 cm.

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD) Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

ISBN: 9789811030666$q(electronic bk.)

Standard No.: 10.1007/978-981-10-3066-6doiSubjects--Topical Terms:

224488
Metal oxide semiconductors, Complementary
--Computer-aided design.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 621.38152

3D TCAD simulation for CMOS nanoeletronic devices
LDR:02397nmm a2200313 a 4500 001 526604
003 DE-He213
005 20170621060813.0
006 m d
007 cr nn 008maaau
008 181012s2018 si s 0 eng d
020 $a 9789811030666$q(electronic bk.)
020 $a 9789811030659$q(paper)
024 7 $a 10.1007/978-981-10-3066-6 $2 doi
035 $a 978-981-10-3066-6
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.99.M44
072 7 $a TJF $2 bicssc
072 7 $a TEC008000 $2 bisacsh
072 7 $a TEC008070 $2 bisacsh
082 0 4 $a 621.38152 $2 23
090 $a TK7871.99.M44 $b W959 2018
100 1 $a Wu, Yung-Chun. $3 799258
245 1 0 $a 3D TCAD simulation for CMOS nanoeletronic devices $h [electronic resource] / $c by Yung-Chun Wu, Yi-Ruei Jhan.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a xiii, 330 p. : $b ill. (some col.), digital ; $c 24 cm.
520 $a This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD) Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
650 0 $a Metal oxide semiconductors, Complementary $x Computer-aided design. $3 224488
650 1 4 $a Engineering. $3 210888
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
650 2 4 $a Semiconductors. $3 182134
650 2 4 $a Nanotechnology and Microengineering. $3 348421
650 2 4 $a Industrial and Production Engineering. $3 273753
700 1 $a Jhan, Yi-Ruei. $3 799259
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-981-10-3066-6
950 $a Engineering (Springer-11647)