國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Research on chemical mechanical poli...

Cheng, Jie.

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnectby Jie Cheng.
作者:	Cheng, Jie.
出版者:	Singapore :Springer Singapore :2018.
面頁冊數:	xviii, 137 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Chemical mechanical planarization.
電子資源:	http://dx.doi.org/10.1007/978-981-10-6165-3
ISBN:	9789811061653$q(electronic bk.)

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect
Cheng, Jie.

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect[electronic resource] /by Jie Cheng. - Singapore :Springer Singapore :2018. - xviii, 137 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

ISBN: 9789811061653$q(electronic bk.)

Standard No.: 10.1007/978-981-10-6165-3doiSubjects--Topical Terms:

265685
Chemical mechanical planarization.

LC Class. No.: TK7874.84

Dewey Class. No.: 621.38152

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect
LDR:01757nmm a2200313 a 4500 001 528288
003 DE-He213
005 20180601133507.0
006 m d
007 cr nn 008maaau
008 181024s2018 si s 0 eng d
020 $a 9789811061653$q(electronic bk.)
020 $a 9789811061646$q(paper)
024 7 $a 10.1007/978-981-10-6165-3 $2 doi
035 $a 978-981-10-6165-3
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7874.84
072 7 $a TGXT $2 bicssc
072 7 $a TEC020000 $2 bisacsh
082 0 4 $a 621.38152 $2 23
090 $a TK7874.84 $b .C518 2018
100 1 $a Cheng, Jie. $3 800523
245 1 0 $a Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect $h [electronic resource] / $c by Jie Cheng.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a xviii, 137 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
520 $a This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
650 0 $a Chemical mechanical planarization. $3 265685
650 0 $a Ruthenium. $3 225545
650 1 4 $a Engineering. $3 210888
650 2 4 $a Manufacturing, Machines, Tools. $3 273747
650 2 4 $a Tribology, Corrosion and Coatings. $3 274658
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 557607
856 4 0 $u http://dx.doi.org/10.1007/978-981-10-6165-3
950 $a Engineering (Springer-11647)