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Research on the radiation effects an...

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Research on the radiation effects and compact model of SiGe HBT

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Research on the radiation effects and compact model of SiGe HBTby Yabin Sun.
作者:	Sun, Yabin.
出版者:	Singapore :Springer Singapore :2018.
面頁冊數:	xxiv, 168 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Bipolar transistorsEffect of radiation on.
電子資源:	http://dx.doi.org/10.1007/978-981-10-4612-4
ISBN:	9789811046124$q(electronic bk.)

Research on the radiation effects and compact model of SiGe HBT
Sun, Yabin.

Research on the radiation effects and compact model of SiGe HBT[electronic resource] /by Yabin Sun. - Singapore :Springer Singapore :2018. - xxiv, 168 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

ISBN: 9789811046124$q(electronic bk.)

Standard No.: 10.1007/978-981-10-4612-4doiSubjects--Topical Terms:

801391
Bipolar transistors
--Effect of radiation on.

LC Class. No.: TK7871.96.B55

Dewey Class. No.: 621.381528

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