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Gallium oxidematerials properties, c...

Fujita, Shizuo.

Gallium oxidematerials properties, crystal growth, and devices /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Gallium oxideedited by Masataka Higashiwaki, Shizuo Fujita.
其他題名:	materials properties, crystal growth, and devices /
其他作者:	Higashiwaki, Masataka.
出版者:	Cham :Springer International Publishing :2020.
面頁冊數:	xxviii, 764 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Gallium.
電子資源:	https://doi.org/10.1007/978-3-030-37153-1
ISBN:	9783030371531$q(electronic bk.)

Gallium oxidematerials properties, crystal growth, and devices /
Gallium oxidematerials properties, crystal growth, and devices /[electronic resource] :edited by Masataka Higashiwaki, Shizuo Fujita. - Cham :Springer International Publishing :2020. - xxviii, 764 p. :ill., digital ;24 cm. - Springer series in materials science,v.2930933-033X ;. - Springer series in materials science ;v. 62..

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3) Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

ISBN: 9783030371531$q(electronic bk.)

Standard No.: 10.1007/978-3-030-37153-1doiSubjects--Topical Terms:

858473
Gallium.

LC Class. No.: QD181.G2 / G355 2020

Dewey Class. No.: 546.675

Gallium oxidematerials properties, crystal growth, and devices /
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520 $a This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3) Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
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