國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Electronic Transport in Atomically P...

Llinas, Juan Pablo.

Electronic Transport in Atomically Precise Graphene Nanoribbons.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Electronic Transport in Atomically Precise Graphene Nanoribbons.
作者:	Llinas, Juan Pablo.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, 2020
面頁冊數:	85 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
附註:	Advisor: Bokor, Jeffrey.
Contained By:	Dissertations Abstracts International82-05B.
標題:	Electrical engineering.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27998215
ISBN:	9798678172440

Electronic Transport in Atomically Precise Graphene Nanoribbons.
Llinas, Juan Pablo.

Electronic Transport in Atomically Precise Graphene Nanoribbons. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 85 p.

Source: Dissertations Abstracts International, Volume: 82-05, Section: B.

Thesis (Ph.D.)--University of California, Berkeley, 2020.

This item must not be sold to any third party vendors.

Advancements in on-surface materials synthesis have led to the development of atomically precise graphene nanoribbons (GNRs). Bottom-up synthesized GNRs have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunneling FETs. However, the short length, wide band gap, and random orientation of GNRs have impeded the fabrication of devices with the expected performance and switching behavior. In this dissertation, progress towards integration of bottom-up synthesized GNRs into electronic devices is presented. The understanding of GNR growth and band structure is surveyed and analyzed with a focus on the implications on device yield and performance. The development of a device fabrication strategy for on-surface synthesized materials is shown, with a focus on the fabrication of high on-current and high on-off ratio 9-atom wide GNR FETs. Furthermore, device fabrication is developed for FETs with parallel arrays of GNRs transferred from single crystal Au(788), which greatly improves device yield. Finally, theoretical charge transport in GNR heterostructures is employed to demonstrate exotic device behavior such as ultra-sharp switching and negative differential resistance. The path towards state-of-the-art GNR-based logic circuits is charted in this work.

ISBN: 9798678172440Subjects--Topical Terms:

454503
Electrical engineering.
Subjects--Index Terms:

Electronic transport

Electronic Transport in Atomically Precise Graphene Nanoribbons.
LDR:02442nmm a2200349 4500 001 594581
005 20210521101700.5
008 210917s2020 ||||||||||||||||| ||eng d
020 $a 9798678172440
035 $a (MiAaPQ)AAI27998215
035 $a AAI27998215
040 $a MiAaPQ $c MiAaPQ
100 1 $a Llinas, Juan Pablo. $3 886607
245 1 0 $a Electronic Transport in Atomically Precise Graphene Nanoribbons.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 85 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
500 $a Advisor: Bokor, Jeffrey.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a Advancements in on-surface materials synthesis have led to the development of atomically precise graphene nanoribbons (GNRs). Bottom-up synthesized GNRs have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunneling FETs. However, the short length, wide band gap, and random orientation of GNRs have impeded the fabrication of devices with the expected performance and switching behavior. In this dissertation, progress towards integration of bottom-up synthesized GNRs into electronic devices is presented. The understanding of GNR growth and band structure is surveyed and analyzed with a focus on the implications on device yield and performance. The development of a device fabrication strategy for on-surface synthesized materials is shown, with a focus on the fabrication of high on-current and high on-off ratio 9-atom wide GNR FETs. Furthermore, device fabrication is developed for FETs with parallel arrays of GNRs transferred from single crystal Au(788), which greatly improves device yield. Finally, theoretical charge transport in GNR heterostructures is employed to demonstrate exotic device behavior such as ultra-sharp switching and negative differential resistance. The path towards state-of-the-art GNR-based logic circuits is charted in this work.
590 $a School code: 0028.
650 4 $a Electrical engineering. $3 454503
650 4 $a Nanotechnology. $3 193873
650 4 $a Materials science. $3 221779
653 $a Electronic transport
653 $a Graphene nanoribbon
653 $a Device fabrication
690 $a 0544
690 $a 0652
690 $a 0794
710 2 $a University of California, Berkeley. $b Electrical Engineering & Computer Sciences. $3 886608
773 0 $t Dissertations Abstracts International $g 82-05B.
790 $a 0028
791 $a Ph.D.
792 $a 2020
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27998215