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Multilayer magnetic nanostructuresproperties and applications /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Multilayer magnetic nanostructuresby Alexander S. Sigov.
Reminder of title:	properties and applications /
Author:	Sigov, Alexander S.
Published:	Singapore :Springer Nature Singapore :2023.
Description:	xi, 137 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Nanostructured materialsMagnetic properties.
Online resource:	https://doi.org/10.1007/978-981-19-6246-2
ISBN:	9789811962462$q(electronic bk.)

Multilayer magnetic nanostructuresproperties and applications /
Sigov, Alexander S.

Multilayer magnetic nanostructuresproperties and applications /[electronic resource] :by Alexander S. Sigov. - Singapore :Springer Nature Singapore :2023. - xi, 137 p. :ill. (some col.), digital ;24 cm. - Springer aerospace technology,1869-1749. - Springer aerospace technology..

Introduction -- Chapter 1. Physical basis of the appearance of magnetic nanostructures -- Chapter 2. Frustrations of exchange interaction -- Chapter 3. Domain walls and phase diagram of a spin-valve system with a non-magnetic layer -- Chapter 4. A thin film of a ferromagnet on an antiferromagnetic substrate. Uncompensated section -- Chapter 5. Compensated cross-section -- Chapter 6. Behavior in a magnetic field -- Chapter 7. Spin-valve structure ferromagnet-antiferromagnet-ferromagnet -- Chapter 8. Surface spin-flop transition in antiferromagnet -- Conclusion.

This book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic intensity, it is necessary to use both on board the aircraft and in ground services computing devices that guarantee the required level of flight safety. The book shows that in the multilayer ferromagnet-antiferromagnet system, the behavior of magnetic parameters in layers of nanometer thickness is largely determined by frustrations. The monograph provides not only a complete analysis of the current state of magnetic nanostructures but also predicts new types generated by exchange interaction frustrations. The phase diagrams "layer thickness (layers)-roughness" of a thin ferromagnetic film on an antiferromagnetic substrate and a spin-valve system ferromagnet-antiferromagnet-ferromagnet are constructed taking into account the energy of single-ion anisotropy. The book presents experimental results that confirm the existence of a new type of domain walls. It is shown that the detected domain walls appear exactly at the locations of the atomic steps, and their thickness increases in proportion to the film thickness with a proportionality coefficient of the order of one. Special attention using mathematical models is placed for optimal orientation of spins at a smooth interface in the case of a compensated cross section of an antiferromagnet and an uncompensated cross section. The constructed phase diagrams and models are compared with the experiments. It is thus concluded that scanning tunneling microscopy (STM) makes it possible to study domain walls generated by frustration on the surface of the structure.

ISBN: 9789811962462$q(electronic bk.)

Standard No.: 10.1007/978-981-19-6246-2doiSubjects--Topical Terms:

219269
Nanostructured materials
--Magnetic properties.

LC Class. No.: TA418.9.N35

Dewey Class. No.: 620.11597

Multilayer magnetic nanostructuresproperties and applications /
LDR:03413nmm a2200337 a 4500 001 647159
003 DE-He213
005 20230613112601.0
006 m d
007 cr nn 008maaau
008 240116s2023 si s 0 eng d
020 $a 9789811962462$q(electronic bk.)
020 $a 9789811962455$q(paper)
024 7 $a 10.1007/978-981-19-6246-2 $2 doi
035 $a 978-981-19-6246-2
040 $a GP $c GP
041 0 $a eng
050 4 $a TA418.9.N35
072 7 $a PHFC $2 bicssc
072 7 $a SCI077000 $2 bisacsh
072 7 $a PHFC $2 thema
082 0 4 $a 620.11597 $2 23
090 $a TA418.9.N35 $b S578 2023
100 1 $a Sigov, Alexander S. $3 956399
245 1 0 $a Multilayer magnetic nanostructures $h [electronic resource] : $b properties and applications / $c by Alexander S. Sigov.
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2023.
300 $a xi, 137 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Springer aerospace technology, $x 1869-1749
505 0 $a Introduction -- Chapter 1. Physical basis of the appearance of magnetic nanostructures -- Chapter 2. Frustrations of exchange interaction -- Chapter 3. Domain walls and phase diagram of a spin-valve system with a non-magnetic layer -- Chapter 4. A thin film of a ferromagnet on an antiferromagnetic substrate. Uncompensated section -- Chapter 5. Compensated cross-section -- Chapter 6. Behavior in a magnetic field -- Chapter 7. Spin-valve structure ferromagnet-antiferromagnet-ferromagnet -- Chapter 8. Surface spin-flop transition in antiferromagnet -- Conclusion.
520 $a This book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic intensity, it is necessary to use both on board the aircraft and in ground services computing devices that guarantee the required level of flight safety. The book shows that in the multilayer ferromagnet-antiferromagnet system, the behavior of magnetic parameters in layers of nanometer thickness is largely determined by frustrations. The monograph provides not only a complete analysis of the current state of magnetic nanostructures but also predicts new types generated by exchange interaction frustrations. The phase diagrams "layer thickness (layers)-roughness" of a thin ferromagnetic film on an antiferromagnetic substrate and a spin-valve system ferromagnet-antiferromagnet-ferromagnet are constructed taking into account the energy of single-ion anisotropy. The book presents experimental results that confirm the existence of a new type of domain walls. It is shown that the detected domain walls appear exactly at the locations of the atomic steps, and their thickness increases in proportion to the film thickness with a proportionality coefficient of the order of one. Special attention using mathematical models is placed for optimal orientation of spins at a smooth interface in the case of a compensated cross section of an antiferromagnet and an uncompensated cross section. The constructed phase diagrams and models are compared with the experiments. It is thus concluded that scanning tunneling microscopy (STM) makes it possible to study domain walls generated by frustration on the surface of the structure.
650 0 $a Nanostructured materials $x Magnetic properties. $3 219269
650 0 $a Thin films, Multilayered. $3 211008
650 1 4 $a Condensed Matter Physics. $3 376278
650 2 4 $a Magnetic Materials. $3 924105
650 2 4 $a Aerospace Technology and Astronautics. $3 309707
650 2 4 $a Microscopy. $3 189037
650 2 4 $a Electronic Devices. $3 913118
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer Nature eBook
830 0 $a Springer aerospace technology. $3 558627
856 4 0 $u https://doi.org/10.1007/978-981-19-6246-2
950 $a Physics and Astronomy (SpringerNature-11651)