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雙材質四閘極金氧半場效電晶體及四閘極金氧半場效電晶體彈道效應之次臨界行為...

國立高雄大學電機工程學系碩博士班

雙材質四閘極金氧半場效電晶體及四閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Quadruple-Gate MOSFETs and Quadruple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits

Record Type:	Language materials, printed : monographic
Paralel Title:	Analytical Subthreshold Behavior of Dual-Material Quadruple-Gate MOSFETs and Quadruple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits
Author:	陳愷彬,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	高雄市
Published:	國立高雄大學;
Year of Publication:	2024[民113]
Description:	xi,127面圖 : 30公分;
Subject:	彈道效應
Subject:	ballistic effects
Online resource:	https://handle.ncl.edu.tw/11296/vx7gxj
Notes:	113年11月15日公開
Notes:	參考書目: 面122-125

雙材質四閘極金氧半場效電晶體及四閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Quadruple-Gate MOSFETs and Quadruple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits
陳, 愷彬

雙材質四閘極金氧半場效電晶體及四閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Quadruple-Gate MOSFETs and Quadruple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits / 陳愷彬撰 - 高雄市 : 國立高雄大學, 2024[民113]. - xi,127面 ; 圖 ; 30公分.
113年11月15日公開參考書目: 面122-125.
彈道效應ballistic effects

雙材質四閘極金氧半場效電晶體及四閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Quadruple-Gate MOSFETs and Quadruple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits
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