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Emerging resistive switching memories

Ouyang, Jianyong.

Emerging resistive switching memories

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Emerging resistive switching memoriesby Jianyong Ouyang.
作者:	Ouyang, Jianyong.
出版者:	Cham :Springer International Publishing :2016.
面頁冊數:	viii, 93 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Nonvolatile random-access memory.
電子資源:	http://dx.doi.org/10.1007/978-3-319-31572-0
ISBN:	9783319315720$q(electronic bk.)

Emerging resistive switching memories
Ouyang, Jianyong.

Emerging resistive switching memories[electronic resource] /by Jianyong Ouyang. - Cham :Springer International Publishing :2016. - viii, 93 p. :ill., digital ;24 cm. - SpringerBriefs in materials,2192-1091. - SpringerBriefs in materials..

Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

ISBN: 9783319315720$q(electronic bk.)

Standard No.: 10.1007/978-3-319-31572-0doiSubjects--Topical Terms:

680408
Nonvolatile random-access memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 621.3973

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520 $a This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
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