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[ author_sort:"nagata, takahiro." ]
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Nanoscale redox reaction at metal/ox...
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Nagata, Takahiro.
Nanoscale redox reaction at metal/oxide interfacea case study on Schottky contact and ReRAM /
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Nanoscale redox reaction at metal/oxide interfaceby Takahiro Nagata.
其他題名:
a case study on Schottky contact and ReRAM /
作者:
Nagata, Takahiro.
出版者:
Tokyo :Springer Japan :2020.
面頁冊數:
xi, 89 p. :ill., digital ;24 cm.
Contained By:
Springer eBooks
標題:
Oxidation-reduction reaction.
電子資源:
https://doi.org/10.1007/978-4-431-54850-8
ISBN:
9784431548508$q(electronic bk.)
Nanoscale redox reaction at metal/oxide interfacea case study on Schottky contact and ReRAM /
Nagata, Takahiro.
Nanoscale redox reaction at metal/oxide interface
a case study on Schottky contact and ReRAM /[electronic resource] :by Takahiro Nagata. - Tokyo :Springer Japan :2020. - xi, 89 p. :ill., digital ;24 cm. - NIMS monographs,2197-8891. - NIMS monographs..
General introduction -- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO -- Surface passivation effect on Schottky contact formation of oxide semiconductors -- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure -- Switching control of oxide-based resistive random access memory by valence state control of oxide -- Combinatorial thin film synthesis for new nanoelectronics materials -- General summary.
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications. In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
ISBN: 9784431548508$q(electronic bk.)
Standard No.: 10.1007/978-4-431-54850-8doiSubjects--Topical Terms:
193673
Oxidation-reduction reaction.
LC Class. No.: QD63.O9 / N343 2020
Dewey Class. No.: 541.393
Nanoscale redox reaction at metal/oxide interfacea case study on Schottky contact and ReRAM /
LDR
:02565nmm a2200349 a 4500
001
579459
003
DE-He213
005
20200922164903.0
006
m
007
cr
008
201229s2020
020
$a
9784431548508$q(electronic bk.)
020
$a
9784431548492$q(paper)
024
7
$a
10.1007/978-4-431-54850-8
$2
doi
035
$a
978-4-431-54850-8
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
QD63.O9
$b
N343 2020
072
7
$a
TGM
$2
bicssc
072
7
$a
TEC021040
$2
bisacsh
072
7
$a
TGM
$2
thema
072
7
$a
PNRX
$2
thema
082
0 4
$a
541.393
$2
23
090
$a
QD63.O9
$b
N147 2020
100
1
$a
Nagata, Takahiro.
$3
868848
245
1 0
$a
Nanoscale redox reaction at metal/oxide interface
$h
[electronic resource] :
$b
a case study on Schottky contact and ReRAM /
$c
by Takahiro Nagata.
260
$a
Tokyo :
$b
Springer Japan :
$b
Imprint: Springer,
$c
2020.
300
$a
xi, 89 p. :
$b
ill., digital ;
$c
24 cm.
490
1
$a
NIMS monographs,
$x
2197-8891
505
0
$a
General introduction -- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO -- Surface passivation effect on Schottky contact formation of oxide semiconductors -- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure -- Switching control of oxide-based resistive random access memory by valence state control of oxide -- Combinatorial thin film synthesis for new nanoelectronics materials -- General summary.
520
$a
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications. In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
650
0
$a
Oxidation-reduction reaction.
$3
193673
650
1 4
$a
Surfaces and Interfaces, Thin Films.
$3
274441
650
2 4
$a
Semiconductors.
$3
182134
650
2 4
$a
Electronics and Microelectronics, Instrumentation.
$3
274412
650
2 4
$a
Nanotechnology.
$3
193873
710
2
$a
SpringerLink (Online service)
$3
273601
773
0
$t
Springer eBooks
830
0
$a
NIMS monographs.
$3
681286
856
4 0
$u
https://doi.org/10.1007/978-4-431-54850-8
950
$a
Chemistry and Materials Science (Springer-11644)
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