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多閘極場效電晶體之行為解析模型及其於低功耗邏輯閘之應用(含三閘極、環繞...

國立高雄大學電機工程學系碩博士班

多閘極場效電晶體之行為解析模型及其於低功耗邏輯閘之應用(含三閘極、環繞式與混合式電晶體) = An Analytical Behavior Model for the Multiple-Gate FETs and Their Applications for Low-Power Logic Gates (Including Tri-Gate, Surrounding-Gate and Hybrid Multiple-Gate FETs)

Record Type:	Language materials, printed : monographic
Paralel Title:	An Analytical Behavior Model for the Multiple-Gate FETs and Their Applications for Low-Power Logic Gates (Including Tri-Gate, Surrounding-Gate and Hybrid Multiple-Gate FETs)
Author:	楊佳琳,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	高雄市
Published:	國立高雄大學;
Year of Publication:	2020[民109]
Description:	[15]，137面圖，表 : 30公分;
Subject:	多閘極金氧半場效電晶體
Subject:	Multiple-Gate MOSFETs
Online resource:	https://handle.ncl.edu.tw/11296/zhq3r8
Notes:	110年5月1日公開
Notes:	參考書目：面108-118

多閘極場效電晶體之行為解析模型及其於低功耗邏輯閘之應用(含三閘極、環繞式與混合式電晶體) = An Analytical Behavior Model for the Multiple-Gate FETs and Their Applications for Low-Power Logic Gates (Including Tri-Gate, Surrounding-Gate and Hybrid Multiple-Gate FETs)
楊, 佳琳

多閘極場效電晶體之行為解析模型及其於低功耗邏輯閘之應用(含三閘極、環繞式與混合式電晶體) = An Analytical Behavior Model for the Multiple-Gate FETs and Their Applications for Low-Power Logic Gates (Including Tri-Gate, Surrounding-Gate and Hybrid Multiple-Gate FETs) / 楊佳琳撰 - 高雄市 : 國立高雄大學, 2020[民109]. - [15]，137面 ; 圖，表 ; 30公分.
110年5月1日公開參考書目：面108-118.
多閘極金氧半場效電晶體Multiple-Gate MOSFETs

多閘極場效電晶體之行為解析模型及其於低功耗邏輯閘之應用(含三閘極、環繞式與混合式電晶體) = An Analytical Behavior Model for the Multiple-Gate FETs and Their Applications for Low-Power Logic Gates (Including Tri-Gate, Surrounding-Gate and Hybrid Multiple-Gate FETs)
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