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Crosstalk in modern on-chip intercon...

Kaushik, Brajesh Kumar.

Crosstalk in modern on-chip interconnectsa FDTD approach /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Crosstalk in modern on-chip interconnectsby Brajesh Kumar Kaushik, V. Ramesh Kumar, Amalendu Patnaik.
其他題名:	a FDTD approach /
作者:	Kaushik, Brajesh Kumar.
其他作者:	Kumar, V. Ramesh.
出版者:	Singapore :Springer Singapore :2016.
面頁冊數:	xv, 116 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	CrosstalkMathematical models.
電子資源:	http://dx.doi.org/10.1007/978-981-10-0800-9
ISBN:	9789811008009$q(electronic bk.)

Crosstalk in modern on-chip interconnectsa FDTD approach /
Kaushik, Brajesh Kumar.

Crosstalk in modern on-chip interconnectsa FDTD approach /[electronic resource] :by Brajesh Kumar Kaushik, V. Ramesh Kumar, Amalendu Patnaik. - Singapore :Springer Singapore :2016. - xv, 116 p. :ill., digital ;24 cm. - SpringerBriefs in applied sciences and technology,2191-530X. - SpringerBriefs in applied sciences and technology..

Introduction to On-chip Interconnects and Modeling -- Interconnect Modeling, CNT and GNR Structure, Properties and Characteristics -- FDTD Model for Crosstalk Analysis of CMOS Gate-Driven Coupled Copper Interconnects -- FDTD Model for Crosstalk Analysis of Multiwall Carbon Nanotube (MWCNT) Interconnects -- Crosstalk Modeling with Width Dependent MFP in MLGNR Interconnects Using FDTD Technique -- An Efficient US-FDTD Model for Crosstalk Analysis of On-chip Interconnects.

The book provides accurate FDTD models for on-chip interconnects, covering most recent advancements in materials and design. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for CNT and GNR based interconnects are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR-based interconnects are also discussed in the book. The proposed models are validated with the HSPICE simulations. The book introduces the current research scenario in the modeling of on-chip interconnects. It presents the structure, properties, and characteristics of graphene based on-chip interconnects and the FDTD modeling of Cu based on-chip interconnects. The model considers the non-linear effects of CMOS driver as well as the transmission line effects of interconnect line that includes coupling capacitance and mutual inductance effects. In a more realistic manner, the proposed model includes the effect of width-dependent MFP of the MLGNR while taking into account the edge roughness.

ISBN: 9789811008009$q(electronic bk.)

Standard No.: 10.1007/978-981-10-0800-9doiSubjects--Topical Terms:

744806
Crosstalk
--Mathematical models.

LC Class. No.: TK5981

Dewey Class. No.: 621.38224

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505 0 $a Introduction to On-chip Interconnects and Modeling -- Interconnect Modeling, CNT and GNR Structure, Properties and Characteristics -- FDTD Model for Crosstalk Analysis of CMOS Gate-Driven Coupled Copper Interconnects -- FDTD Model for Crosstalk Analysis of Multiwall Carbon Nanotube (MWCNT) Interconnects -- Crosstalk Modeling with Width Dependent MFP in MLGNR Interconnects Using FDTD Technique -- An Efficient US-FDTD Model for Crosstalk Analysis of On-chip Interconnects.
520 $a The book provides accurate FDTD models for on-chip interconnects, covering most recent advancements in materials and design. Furthermore, depending on the geometry and physical configurations, different electrical equivalent models for CNT and GNR based interconnects are presented. Based on the electrical equivalent models the performance comparison among the Cu, CNT and GNR-based interconnects are also discussed in the book. The proposed models are validated with the HSPICE simulations. The book introduces the current research scenario in the modeling of on-chip interconnects. It presents the structure, properties, and characteristics of graphene based on-chip interconnects and the FDTD modeling of Cu based on-chip interconnects. The model considers the non-linear effects of CMOS driver as well as the transmission line effects of interconnect line that includes coupling capacitance and mutual inductance effects. In a more realistic manner, the proposed model includes the effect of width-dependent MFP of the MLGNR while taking into account the edge roughness.
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