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Modeling and electrothermal simulati...

Bayne, Stephen

Modeling and electrothermal simulation of SiC power devicesusing Silvaco Atlas /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Modeling and electrothermal simulation of SiC power devicesBejoy N. Pushpakaran, Stephen B. Bayne.
其他題名:	using Silvaco Atlas /
作者:	Pushpakaran, Bejoy
其他作者:	Bayne, Stephen
出版者:	Singapore :World Scientific Publishing,c2019.
面頁冊數:	1 online resource (464 p.) :ill.
標題:	Wide gap semiconductors.
電子資源:	https://www.worldscientific.com/worldscibooks/10.1142/10929#t=toc
ISBN:	9789813237834$q(electronic bk.)

Modeling and electrothermal simulation of SiC power devicesusing Silvaco Atlas /
Pushpakaran, Bejoy

Modeling and electrothermal simulation of SiC power devicesusing Silvaco Atlas /[electronic resource] :Bejoy N. Pushpakaran, Stephen B. Bayne. - 1st ed. - Singapore :World Scientific Publishing,c2019. - 1 online resource (464 p.) :ill.

Includes bibliographical references and index.

"The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco ATLAS to simulate SiC power device structure, as well as supplementary material for download."--

ISBN: 9789813237834$q(electronic bk.)Subjects--Uniform Titles:

ATLAS TCAD (Computer program)
Subjects--Topical Terms:

243521
Wide gap semiconductors.

LC Class. No.: QC611.8.W53 / P87 2019

Dewey Class. No.: 621.3815/2

Modeling and electrothermal simulation of SiC power devicesusing Silvaco Atlas /
LDR:02352nmm a2200277 a 4500 001 582812
003 WSP
005 20190403152627.0
006 m o d
007 cr cnu---unuuu
008 210122s2019 si a ob 001 0 eng c
010 $z 2018042653
020 $a 9789813237834$q(electronic bk.)
020 $z 9789813237827$q(hbk.)
035 $a 00010929
040 $a WSPC $b eng $c WSPC
041 0 $a eng
050 0 4 $a QC611.8.W53 $b P87 2019
082 0 4 $a 621.3815/2 $2 23
100 1 $a Pushpakaran, Bejoy $q (Bejoy N.) $3 873454
245 1 0 $a Modeling and electrothermal simulation of SiC power devices $h [electronic resource] : $b using Silvaco Atlas / $c Bejoy N. Pushpakaran, Stephen B. Bayne.
250 $a 1st ed.
260 $a Singapore : $b World Scientific Publishing, $c c2019.
300 $a 1 online resource (464 p.) : $b ill.
504 $a Includes bibliographical references and index.
520 $a "The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco ATLAS to simulate SiC power device structure, as well as supplementary material for download."-- $c Publisher's website.
588 $a Title from web page (viewed April 4, 2019)
630 0 0 $a ATLAS TCAD (Computer program) $3 873456
650 0 $a Wide gap semiconductors. $3 243521
650 0 $a Silicon carbide. $3 238382
700 1 $a Bayne, Stephen $q (Stephen B.) $3 873455
856 4 0 $u https://www.worldscientific.com/worldscibooks/10.1142/10929#t=toc