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Gallium nitride-enabled high frequen...

Meneghesso, Gaudenzio.

Gallium nitride-enabled high frequency and high efficiency power conversion

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Gallium nitride-enabled high frequency and high efficiency power conversionedited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
其他作者:	Meneghesso, Gaudenzio.
出版者:	Cham :Springer International Publishing :2018.
面頁冊數:	xiii, 232 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
標題:	SemiconductorsMaterials.
電子資源:	http://dx.doi.org/10.1007/978-3-319-77994-2
ISBN:	9783319779942$q(electronic bk.)

Gallium nitride-enabled high frequency and high efficiency power conversion
Gallium nitride-enabled high frequency and high efficiency power conversion[electronic resource] /edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. - Cham :Springer International Publishing :2018. - xiii, 232 p. :ill. (some col.), digital ;24 cm. - Integrated circuits and systems,1558-9412. - Integrated circuits and systems..

Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

ISBN: 9783319779942$q(electronic bk.)

Standard No.: 10.1007/978-3-319-77994-2doiSubjects--Topical Terms:

197826
Semiconductors
--Materials.

LC Class. No.: TK7871.85 / .G355 2018

Dewey Class. No.: 621.38152

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520 $a This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
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